POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

doi:10.1088/1004-423X/2/8/003

中国物理B ›› 1993, Vol. 2 ›› Issue (8): 577-582.doi: 10.1088/1004-423X/2/8/003

POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

卢志恒¹, 王大椿¹, G.K?gel²

(1)Department of Physics, Beijing Normal University, Beijing 100875, China; (2)Institut für Kern-Festk?rperphysik, Bundeswehr Universit?t, Germany

收稿日期:1992-06-30 出版日期:1993-08-20 发布日期:1993-08-20
基金资助:
Project supported in part by the National Natural Science Foundation of China and in part by the Department of Science and Research of Germany.

POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

LU ZHI-HENG (卢志恒)^a, WANG DA-CHUN (王大椿)^a, G.K·gel^b

^a Department of Physics, Beijing Normal University, Beijing 100875, China; ^b Institut für Kern-Festk$\ddot{\rm o}$rperphysik, Bundeswehr Universit$\bar{\rm a}$t, Germany

Received:1992-06-30 Online:1993-08-20 Published:1993-08-20
Supported by:
Project supported in part by the National Natural Science Foundation of China and in part by the Department of Science and Research of Germany.

摘要/Abstract

摘要： The lifetime spectroscopy of slow positron accelerated with linear accelerator and pulse punch system was first used to analyze the vacancies in the thin surface layer of silicon heavily doped with arsenic. The results demonstrated that no mono-vacancy was detected to support the arsenic-vacancy complex models for explaining the electrical deactivation mechanism of arsenic-heavily-doped silicon.

中图分类号: (Positron annihilation)

78.70.Bj

68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.66.Db (Elemental semiconductors and insulators) 73.61.Cw (Elemental semiconductors) 68.35.Dv (Composition, segregation; defects and impurities) 68.47.Fg (Semiconductor surfaces)

卢志恒, 王大椿, G.K?gel. POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si[J]. 中国物理B, 1993, 2(8): 577-582.

LU ZHI-HENG (卢志恒), WANG DA-CHUN (王大椿), G.K·gel. POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si[J]. Acta Physica Sinica (Overseas Edition), 1993, 2(8): 577-582.

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POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

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