中国物理B ›› 1993, Vol. 2 ›› Issue (11): 833-840.doi: 10.1088/1004-423X/2/11/005

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

A STUDY ON SECONDARY DEFECTS IN SELF-ION IMPLANTED Si

田人和   

  1. Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China
  • 收稿日期:1992-09-24 出版日期:1993-11-20 发布日期:1993-11-20
  • 基金资助:
    Project supported by the National Science Foundation of China.

A STUDY ON SECONDARY DEFECTS IN SELF-ION IMPLANTED Si

TIAN REN-HE (田人和)   

  1. Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China
  • Received:1992-09-24 Online:1993-11-20 Published:1993-11-20
  • Supported by:
    Project supported by the National Science Foundation of China.

摘要: By using the cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (and channeling) spectrometry (RBS) and high-energy electron beam irra-diation technology with a high voltage electron microscope (HVEM), secondary defects in self-ion implanted Si has been studied. The result shows that the depths of secondary de-fect bands are related to the implantation energies, and the values of depths are slightly greater than the projected ranges of self-ions implanted into Si. In the higher energy region (>1MeV), the former exceeds the latter by nearly 0.2-0.4μm. Experiments indicate that the pre-implantation damage (the primary defect), on one hand, will superpose on the primary defects of post-implantations and make secondary defects increase, and on the other hand, it will also provide an enhanced-diffusion region for vacancies and interstitials created by the post-implantation and reduce the formation of secondary defects. Experiments also show that dislocation loops in secondary defect bands of self-implanted Si are interstitial in nature.

Abstract: By using the cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (and channeling) spectrometry (RBS) and high-energy electron beam irra-diation technology with a high voltage electron microscope (HVEM), secondary defects in self-ion implanted Si has been studied. The result shows that the depths of secondary de-fect bands are related to the implantation energies, and the values of depths are slightly greater than the projected ranges of self-ions implanted into Si. In the higher energy region (>1MeV), the former exceeds the latter by nearly 0.2-0.4μm. Experiments indicate that the pre-implantation damage (the primary defect), on one hand, will superpose on the primary defects of post-implantations and make secondary defects increase, and on the other hand, it will also provide an enhanced-diffusion region for vacancies and interstitials created by the post-implantation and reduce the formation of secondary defects. Experiments also show that dislocation loops in secondary defect bands of self-implanted Si are interstitial in nature.

中图分类号:  (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))

  • 61.72.Ff
61.72.J- (Point defects and defect clusters) 61.72.uf (Ge and Si) 66.30.Lw (Diffusion of other defects) 61.80.Fe (Electron and positron radiation effects)