中国物理B ›› 2015, Vol. 24 ›› Issue (9): 96103-096103.doi: 10.1088/1674-1056/24/9/096103
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
杨亿斌a b, 柳铭岗a b, 陈伟杰a b, 韩小标a b, 陈杰a b, 林秀其a b, 林佳利a b, 罗慧a b, 廖强a b, 臧文杰a b, 陈崟松a b, 邱运灵a b, 吴志盛a, 刘扬b, 张佰君a b
Yang Yi-Bin (杨亿斌)a b, Liu Ming-Gang (柳铭岗)a b, Chen Wei-Jie (陈伟杰)a b, Han Xiao-Biao (韩小标)a b, Chen Jie (陈杰)a b, Lin Xiu-Qi (林秀其)a b, Lin Jia-Li (林佳利)a b, Luo Hui (罗慧)a b, Liao Qiang (廖强)a b, Zang Wen-Jie (臧文杰)a b, Chen Yin-Song (陈崟松)a b, Qiu Yun-Ling (邱运灵)a b, Wu Zhi-Sheng (吴志盛)a, Liu Yang (刘扬)b, Zhang Bai-Jun (张佰君)a b
摘要:
In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3× 2" Thomas Swan close coupled showerhead metal organic chemical vapor deposition (MOCVD) system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses (tensile and compressive) during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, GaN grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded AlGaN buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.
中图分类号: (III-V and II-VI semiconductors)