Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

doi:10.1088/1674-1056/19/3/036801

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 36801-036801.doi: 10.1088/1674-1056/19/3/036801

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

陈贵锋¹, 杨辉², 吴玉新³, 朱建军³, 张书明³, 江德生³, 刘宗顺³, 赵德刚³, 王辉³, 王玉田³

(1)Institute of Information Function Materials, Hebei University of Technology, Tianjin 300130, China; (2)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China; (3)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2009-04-22 修回日期:2009-05-27 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos.~60506001, 60476021, 60576003, 60776047 and 60836003), the National Basic Research Program of China (Grant No.~2007CB936700), and the Project of Technological Research and Development of Hebei Province, China (Grant No.~07215134).

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

Wu Yu-Xin(吴玉新)^a), Zhu Jian-Jun(朱建军)^a)†, Chen Gui-Feng(陈贵锋)^b), Zhang Shu-Ming(张书明)^a), Jiang De-Sheng(江德生)^a), Liu Zong-Shun(刘宗顺)^a), Zhao De-Gang(赵德刚)^a), Wang Hui(王辉)^a), Wang Yu-Tian(王玉田)^a), and Yang Hui(杨辉)^a)c)

^a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^b Institute of Information Function Materials, Hebei University of Technology, Tianjin 300130, China; ^c Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China

Received:2009-04-22 Revised:2009-05-27 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos.~60506001, 60476021, 60576003, 60776047 and 60836003), the National Basic Research Program of China (Grant No.~2007CB936700), and the Project of Technological Research and Development of Hebei Province, China (Grant No.~07215134).

摘要/Abstract

摘要： We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Abstract: We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Key words: GaN, Si (111) substrate, metalorganic chemical vapour deposition, AlN buffer layer, AlGaN interlayer

中图分类号: (Nucleation and growth)

68.55.A-

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.05.Ea (III-V semiconductors) 68.60.Bs (Mechanical and acoustical properties) 61.72.Ff (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))

吴玉新, 朱建军, 陈贵锋, 张书明, 江德生, 刘宗顺, 赵德刚, 王辉, 王玉田, 杨辉. Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer[J]. 中国物理B, 2010, 19(3): 36801-036801.

Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Chen Gui-Feng(陈贵锋), Zhang Shu-Ming(张书明), Jiang De-Sheng(江德生), Liu Zong-Shun(刘宗顺), Zhao De-Gang(赵德刚), Wang Hui(王辉), Wang Yu-Tian(王玉田), and Yang Hui(杨辉). Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer[J]. Chin. Phys. B, 2010, 19(3): 36801-036801.

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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

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