中国物理B ›› 2026, Vol. 35 ›› Issue (6): 66101-066101.doi: 10.1088/1674-1056/ae521a
High-pressure synthesis, crystal structure, and electronic properties of Ba9Zr2.79Te15
Runteng Chen(陈润滕)1,2,†, Guodong Wang(王国东)2,†, Zhe Wang(王哲)3,†, Wenmin Li(李文敏)4, Jianfa Zhao(赵建发)2,5, Zheng Deng(邓正)2,5, Heng Wang(王恒)1,‡, Xiancheng Wang(望贤成)2,5,§, Jun Zhang(张俊)2,5,¶, and Changqing Jin(靳常青)2,5,#
- 1 College of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541008, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang 050024, China;
4 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China;
5 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China
High-pressure synthesis, crystal structure, and electronic properties of Ba9Zr2.79Te15
Runteng Chen(陈润滕)1,2,†, Guodong Wang(王国东)2,†, Zhe Wang(王哲)3,†, Wenmin Li(李文敏)4, Jianfa Zhao(赵建发)2,5, Zheng Deng(邓正)2,5, Heng Wang(王恒)1,‡, Xiancheng Wang(望贤成)2,5,§, Jun Zhang(张俊)2,5,¶, and Changqing Jin(靳常青)2,5,#
- 1 College of Physics and Electronic Information Engineering, Guilin University of Technology, Guilin 541008, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang 050024, China;
4 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China;
5 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China
摘要： The polycrystalline Ba$_{9}$Zr$_{2.79}$Te$_{15}$ sample was prepared by employing a solid-state synthesis method under high-temperature and high-pressure conditions. Comprehensive characterizations of structural and electrical properties were performed. Ba$_{9}$Zr$_{2.79}$Te$_{15}$ crystallizes in a hexagonal lattice with the space group $P\bar{6}c$2 (No. 188) and lattice parameters $a = 10.1977(8)$ Å and $c = 20.2646(9)$ Å. It is mainly composed of face-sharing ZrTe$_{6}$ octahedral chains extending along the $c$-axis, which form a triangular lattice in the ab plane. The Te chains are located in the middle of the ZrTe$_{6}$ triangular lattice. Electrical transport measurements indicate that Ba$_{9}$Zr$_{2.79}$Te$_{15}$ is a semiconductor. The thermal activation band gap of 0.23 eV is qualitatively discussed when compared with that of its sister compound Ba$_{9}$Zr$_{3}$Se$_{15}$, proving that the p electrons in the Te chains, with high quantum number orbitals, dominate electron conduction. Furthermore, the Debye temperature of Ba$_{9}$Zr$_{2.79}$Te$_{15}$ is calculated to be 157.28(9) K from thermodynamic measurements. The newly synthesized Ba$_{9}$Zr$_{2.79}$Te$_{15}$ with quasi-one-dimensional chain characteristics provides an opportunity for further exploration of diverse physical properties.
中图分类号: (X-ray diffraction)
- 61.05.cp