中国物理B ›› 2026, Vol. 35 ›› Issue (5): 57302-057302.doi: 10.1088/1674-1056/ae32fd

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Cascaded deep UV and blue LEDs with integrated GaN tunnel junction

Amina Hafeez1, Muhammad Usman2,†, Hazrat Ali1,‡, Jamshad Bashir2, and Zoya Noor2   

  1. 1 Department of Physics, Abbottabad University of Science and Technology, Khyber Pakhtunkhwa, Pakistan;
    2 Faculty of Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
  • 收稿日期:2025-09-19 修回日期:2025-12-15 接受日期:2026-01-04 发布日期:2026-05-15
  • 通讯作者: Muhammad Usman, Hazrat Ali E-mail:m.usman@giki.edu.pk;yamanuom@gmail.com

Cascaded deep UV and blue LEDs with integrated GaN tunnel junction

Amina Hafeez1, Muhammad Usman2,†, Hazrat Ali1,‡, Jamshad Bashir2, and Zoya Noor2   

  1. 1 Department of Physics, Abbottabad University of Science and Technology, Khyber Pakhtunkhwa, Pakistan;
    2 Faculty of Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan
  • Received:2025-09-19 Revised:2025-12-15 Accepted:2026-01-04 Published:2026-05-15
  • Contact: Muhammad Usman, Hazrat Ali E-mail:m.usman@giki.edu.pk;yamanuom@gmail.com

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摘要： The growing demand for reliable sterilization methods, coupled with the spread of COVID-19, has driven exploration of the use of deep ultraviolet (DUV) radiation for disinfection purposes. Given that exposure to highly energetic DUV radiation poses a significant risk to the eyes and skin, portable sterilizing equipment must emit both visible and DUV wavelengths to simultaneously indicate its operation and perform sterilize. In this paper, we explore the effect of the tunnel junction in cascading visible and ultraviolet active regions instead of the cascade region. In our reference device, two Al$_{x}$Ga$_{1-x}$N layers are used to facilitate carrier movement from one active region to another, but this does not work effectively due to the presence of greater barriers for holes and electrons. Introducing a tunnel junction reduces these barriers; consequently, the radiative recombination rate is increased by a factor of 2.2, while the emission intensity is increased by factors of 1.3 and 2.7 for ultraviolet and blue wavelengths, respectively.

关键词: tunneling, quantum wells, radiative recombination, III-V semiconductors

Abstract: The growing demand for reliable sterilization methods, coupled with the spread of COVID-19, has driven exploration of the use of deep ultraviolet (DUV) radiation for disinfection purposes. Given that exposure to highly energetic DUV radiation poses a significant risk to the eyes and skin, portable sterilizing equipment must emit both visible and DUV wavelengths to simultaneously indicate its operation and perform sterilize. In this paper, we explore the effect of the tunnel junction in cascading visible and ultraviolet active regions instead of the cascade region. In our reference device, two Al$_{x}$Ga$_{1-x}$N layers are used to facilitate carrier movement from one active region to another, but this does not work effectively due to the presence of greater barriers for holes and electrons. Introducing a tunnel junction reduces these barriers; consequently, the radiative recombination rate is increased by a factor of 2.2, while the emission intensity is increased by factors of 1.3 and 2.7 for ultraviolet and blue wavelengths, respectively.

Key words: tunneling, quantum wells, radiative recombination, III-V semiconductors

中图分类号:  (Tunneling)

  • 73.43.Jn
68.65.Fg (Quantum wells) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 78.66.Fd (III-V semiconductors)