Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga2O3 for UV detection

doi:10.1088/1674-1056/adee8d

中国物理B ›› 2026, Vol. 35 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/adee8d

Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga₂O₃ for UV detection

Muzi Li(李木子), Maolin Zhang(张茂林), Xueqiang Ji(季学强), Shan Li(李山), Lili Yang(杨莉莉)^†, and Weihua Tang(唐为华)^‡

Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

收稿日期:2025-05-19 修回日期:2025-06-22 接受日期:2025-07-11 发布日期:2026-02-05
通讯作者: Lili Yang, Weihua Tang E-mail:liliyang@njupt.edu.cn;whtang@njupt.edu.cn
基金资助:
Project supported by the Joints Fund of the National Natural Science Foundation of China (Grant No. U23A20349) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 62204126, 62305171, and 62304113).

Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga₂O₃ for UV detection

Muzi Li(李木子), Maolin Zhang(张茂林), Xueqiang Ji(季学强), Shan Li(李山), Lili Yang(杨莉莉)^†, and Weihua Tang(唐为华)^‡

Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Received:2025-05-19 Revised:2025-06-22 Accepted:2025-07-11 Published:2026-02-05
Supported by:
Project supported by the Joints Fund of the National Natural Science Foundation of China (Grant No. U23A20349) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 62204126, 62305171, and 62304113).

摘要/Abstract

摘要： With the rapid advancement of optoelectronic technology, high-performance photodetectors are increasingly in demand in fields such as environmental monitoring, optical communication, and defense systems, where ultraviolet detection is critical. However, conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents. To address these challenges, wide-bandgap semiconductors have emerged as promising alternatives. Here, we fabricated a horizontally structured n-n heterojunction photodetector by growing $\beta $-Ga$_2$O$_3$ on Si-GaN via plasma-enhanced chemical vapor deposition. The device exhibits a self-powered photocurrent of 3.5 nA at zero bias, enabled by the photovoltaic effect of the space charge region. Under 254-nm and 365-nm illumination, it exhibits rectification behavior, achieving a responsivity of 0.475 mA/W (0 V, 220 μW/cm$^2$ at 254 nm) and 257.6 mA/W ($-5$ V), respectively. Notably, the photodetector demonstrates a high photocurrent-to-dark current ratio of 10$^5$ under $-5$-V bias, highlighting its potential for self-powered and high-performance UV detection applications.

关键词: Si-GaN/$\beta$-Ga$_{2}$O$_{3}$, horizontally structured, n-n heterojunction, self-powered

Abstract: With the rapid advancement of optoelectronic technology, high-performance photodetectors are increasingly in demand in fields such as environmental monitoring, optical communication, and defense systems, where ultraviolet detection is critical. However, conventional semiconductor materials suffer from limited UV-visible detection capabilities owing to their narrow bandgaps and high dark currents. To address these challenges, wide-bandgap semiconductors have emerged as promising alternatives. Here, we fabricated a horizontally structured n-n heterojunction photodetector by growing $\beta $-Ga$_2$O$_3$ on Si-GaN via plasma-enhanced chemical vapor deposition. The device exhibits a self-powered photocurrent of 3.5 nA at zero bias, enabled by the photovoltaic effect of the space charge region. Under 254-nm and 365-nm illumination, it exhibits rectification behavior, achieving a responsivity of 0.475 mA/W (0 V, 220 μW/cm$^2$ at 254 nm) and 257.6 mA/W ($-5$ V), respectively. Notably, the photodetector demonstrates a high photocurrent-to-dark current ratio of 10$^5$ under $-5$-V bias, highlighting its potential for self-powered and high-performance UV detection applications.

Key words: Si-GaN/$\beta$-Ga$_{2}$O$_{3}$, horizontally structured, n-n heterojunction, self-powered

中图分类号: (Semiconductor devices)

85.30.-z

85.30.De (Semiconductor-device characterization, design, and modeling) 85.25.-j (Superconducting devices)

Muzi Li(李木子), Maolin Zhang(张茂林), Xueqiang Ji(季学强), Shan Li(李山), Lili Yang(杨莉莉), and Weihua Tang(唐为华). Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga₂O₃ for UV detection[J]. 中国物理B, 2026, 35(2): 28502-028502.

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Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga₂O₃ for UV detection

Self-powered horizontally structured n-n heterojunction photodetector based on Si-GaN/β-Ga₂O₃ for UV detection

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