中国物理B ›› 2017, Vol. 26 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/26/11/118102

所属专题： TOPICAL REVIEW — ZnO-related materials and devices

• TOPICAL REVIEW—ZnO-related materials and devices • 上一篇    下一篇

One-dimensional ZnO nanostructure-based optoelectronics

Zheng Zhang(张铮), Zhuo Kang(康卓), Qingliang Liao(廖庆亮), Xiaomei Zhang(张晓梅), Yue Zhang(张跃)   

  1. 1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
    2. Department of Mechanical Engineering, School of Engineering, Tokyo Institute of Technology NE-3, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan;
    3. Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
  • 收稿日期:2017-07-07 修回日期:2017-08-28 出版日期:2017-11-05 发布日期:2017-11-05
  • 基金资助:

    Project supported by the National Major Research Program of China (Grant No. 2013CB932602), the National Key Research and Development Program of China (Grant No. 2016YFA0202701), the Program of Introducing Talents of Discipline to Universities, China (Grant No. B14003), the National Natural Science Foundation of China (Grant Nos. 51527802, 51232001, 51602020, 51672026, and 51372020), China Postdoctoral Science Foundation (Grant Nos. 2015M580981 and 2016T90033) Beijing Municipal Science & Technology Commission, China, the State Key Laboratory for Advanced Metals and Materials, China (Grant No. 2016Z-06), the Fundamental Research Funds for the Central Universities, China, and JST in Japan, Research and Education Consortium for Innovation of Advanced Integrated Science.

One-dimensional ZnO nanostructure-based optoelectronics

Zheng Zhang(张铮)1, Zhuo Kang(康卓)1, Qingliang Liao(廖庆亮)1, Xiaomei Zhang(张晓梅)2, Yue Zhang(张跃)1,3   

  1. 1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
    2. Department of Mechanical Engineering, School of Engineering, Tokyo Institute of Technology NE-3, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan;
    3. Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
  • Received:2017-07-07 Revised:2017-08-28 Online:2017-11-05 Published:2017-11-05
  • Contact: Yue Zhang E-mail:yuezhang@ustb.edu.cn
  • Supported by:

    Project supported by the National Major Research Program of China (Grant No. 2013CB932602), the National Key Research and Development Program of China (Grant No. 2016YFA0202701), the Program of Introducing Talents of Discipline to Universities, China (Grant No. B14003), the National Natural Science Foundation of China (Grant Nos. 51527802, 51232001, 51602020, 51672026, and 51372020), China Postdoctoral Science Foundation (Grant Nos. 2015M580981 and 2016T90033) Beijing Municipal Science & Technology Commission, China, the State Key Laboratory for Advanced Metals and Materials, China (Grant No. 2016Z-06), the Fundamental Research Funds for the Central Universities, China, and JST in Japan, Research and Education Consortium for Innovation of Advanced Integrated Science.

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摘要：

Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. One-dimensional (1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed.

关键词: one-dimensional ZnO optoelectronics, self-powered photodetector, strain engineering, Van der Waals heterostructure

Abstract:

Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. One-dimensional (1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed.

Key words: one-dimensional ZnO optoelectronics, self-powered photodetector, strain engineering, Van der Waals heterostructure

中图分类号:  (Nanoscale materials and structures: fabrication and characterization)

  • 81.07.-b
81.07.Gf (Nanowires) 42.70.Gi (Light-sensitive materials) 42.79.-e (Optical elements, devices, and systems)