中国物理B ›› 2026, Vol. 35 ›› Issue (2): 27702-027702.doi: 10.1088/1674-1056/adf0e4
Characterization of large ferroelectric polarization and high-TC in sol-gel deposited PbTiO3-based perovskite thin films
Mengqi Ye(叶梦琪)1,2, Zhao Pan(潘昭)2,†, Weibin Song(宋伟宾)2, Jin Liu(刘锦)2, Xubin Ye(叶旭斌)2, Xin Xiong(熊心)3, Hui Liu(刘辉)3, Longlong Fan(樊龙龙)4, Nianpeng Lu(鲁年鹏)2, Ruilong Wang(王瑞龙)1,‡, and Youwen Long(龙有文)2,5,§
- 1 Key Laboratory for Intelligent Sensing System and Security of Ministry of Education, School of Physics & School of Microelectrics, Hubei University, Wuhan 430062, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physics, University of Science and Technology Beijing, Beijing 100083, China;
4 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
5 Songshan Lake Materials Laboratory, Dongguan 523808, China
Characterization of large ferroelectric polarization and high-TC in sol-gel deposited PbTiO3-based perovskite thin films
Mengqi Ye(叶梦琪)1,2, Zhao Pan(潘昭)2,†, Weibin Song(宋伟宾)2, Jin Liu(刘锦)2, Xubin Ye(叶旭斌)2, Xin Xiong(熊心)3, Hui Liu(刘辉)3, Longlong Fan(樊龙龙)4, Nianpeng Lu(鲁年鹏)2, Ruilong Wang(王瑞龙)1,‡, and Youwen Long(龙有文)2,5,§
- 1 Key Laboratory for Intelligent Sensing System and Security of Ministry of Education, School of Physics & School of Microelectrics, Hubei University, Wuhan 430062, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physics, University of Science and Technology Beijing, Beijing 100083, China;
4 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
5 Songshan Lake Materials Laboratory, Dongguan 523808, China
摘要： BiMeO3-PbTiO3 (where Me represents transition metals) perovskite-type thin films have been widely studied due to their superior ferroelectric properties, including robust ferroelectric polarization and high Curie temperatures. In this study, PbTiO$_{3}$-based perovskite thin films of $x$Bi(Cu$_{1/2}$Zr$_{1/2}$)O$_{3}$-($1-x$)PbTiO$_{3 }$ ($x$BCZ-($1-x$)PT) were designed and prepared on Pt(111)/Ti/SiO$_{2}$/Si substrates using the conventional sol-gel method. The $x$BCZ-($1-x$)PT thin films demonstrate remarkable crystallinity, characterized by a perovskite structure and a dense microstructure, which contribute to their high-performance ferroelectric and fatigue properties. Notably, the thin films exhibit large remnant polarization (2$P_{\rm r}$) values, reaching 98 μC$\cdot$cm$^{-2}$ and 74 μC$\cdot$cm$^{-2}$ for the 0.05BCZ-0.95PT and 0.1BCZ-0.9PT compositions, respectively. Furthermore, the thin films also demonstrate a high Curie temperature ($T_{\rm C} = 510 ^\circ$C), as well as favorable fatigue properties and low leakage current, suggesting their potential applicability in ferroelectric devices.
中图分类号: (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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