中国物理B ›› 2026, Vol. 35 ›› Issue (1): 17503-017503.doi: 10.1088/1674-1056/ae101b

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Anomalous Hall effect and Lifshitz transition in Fe3Sn2 nanosheets

Xue Yang(杨雪)1,2,†, Jijian Liu(刘继健)3,4,†, Xinyi Zheng(郑新义)1,2, Lei Xu(徐磊)1,2, Lihong Hu(胡利洪)1,2, Sicheng Zhou(周思成)1,2, Siyuan Zhou(周思远)1,2, Ximing Zhang(张栖铭)1,2, Bingbing Tong(仝冰冰)1,5, Jie Shen(沈洁)1,2,5, Zhaozheng Lyu(吕昭征)1,2, Xiunian Jing(景秀年)1, Fanming Qu(屈凡明)1,2,5, Peiling Li(李沛岭)1,2,5,‡, Jiadong Zhou(周家东)3,4,§, Guangtong Liu(刘广同)1,2,5,¶, and Li Lü(吕力)1,2,5   

  1. 1 Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Institute of Technology, Beijing 100081, China;
    4 School of Physics, Beijing Institute of Technology, Beijing 100081, China;
    5 Hefei National Laboratory, Hefei 230088, China
  • 收稿日期:2025-08-01 修回日期:2025-09-30 接受日期:2025-10-07 发布日期:2025-12-29
  • 通讯作者: Peiling Li, Jiadong Zhou, Guangtong Liu E-mail:cioran@iphy.ac.cn;jdzhou@bit.edu.cn;gtliu@iphy.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403503, 2022YFA1602802, 2023YFA1607400, and 2024YFA1613200) and Beijing Natural Science Foundation (Grant No. JQ23022). This work is supported by the Synergetic Extreme Condition User Facility and the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302600).

Anomalous Hall effect and Lifshitz transition in Fe3Sn2 nanosheets

Xue Yang(杨雪)1,2,†, Jijian Liu(刘继健)3,4,†, Xinyi Zheng(郑新义)1,2, Lei Xu(徐磊)1,2, Lihong Hu(胡利洪)1,2, Sicheng Zhou(周思成)1,2, Siyuan Zhou(周思远)1,2, Ximing Zhang(张栖铭)1,2, Bingbing Tong(仝冰冰)1,5, Jie Shen(沈洁)1,2,5, Zhaozheng Lyu(吕昭征)1,2, Xiunian Jing(景秀年)1, Fanming Qu(屈凡明)1,2,5, Peiling Li(李沛岭)1,2,5,‡, Jiadong Zhou(周家东)3,4,§, Guangtong Liu(刘广同)1,2,5,¶, and Li Lü(吕力)1,2,5   

  1. 1 Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Institute of Technology, Beijing 100081, China;
    4 School of Physics, Beijing Institute of Technology, Beijing 100081, China;
    5 Hefei National Laboratory, Hefei 230088, China
  • Received:2025-08-01 Revised:2025-09-30 Accepted:2025-10-07 Published:2025-12-29
  • Contact: Peiling Li, Jiadong Zhou, Guangtong Liu E-mail:cioran@iphy.ac.cn;jdzhou@bit.edu.cn;gtliu@iphy.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403503, 2022YFA1602802, 2023YFA1607400, and 2024YFA1613200) and Beijing Natural Science Foundation (Grant No. JQ23022). This work is supported by the Synergetic Extreme Condition User Facility and the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302600).

摘要: Fe$_{3}$Sn$_{2}$, a ferromagnetic metal with a kagome lattice, serves as an ideal platform for exploring topological electronic states and Berry curvature due to its unique band structure. However, systematic reports on the transport properties of Fe$_{3}$Sn$_{2}$ nanosheets remain scarce. We present temperature-dependent transport property measurements of Fe$_{3}$Sn$_{2}$ nanosheets synthesized via chemical vapor deposition on Si/SiO$_{2}$ substrates. The samples exhibit a robust anomalous Hall effect from 40 K to 300 K, along with a magnetoresistance sign reversal at 40 K at high magnetic fields, indicating a spin reorientation from in-plane to out-of-plane. Notably, a sharp crossover in the dominant transport contribution from electrons to holes near 200 K is observed, accompanied by distinct anomalous Hall behaviors in the two regimes, indicating a temperature-induced Lifshitz transition within the multi-band system. This divergence is potentially linked to a topological reconstruction of the Fermi surface across the transition. Our findings highlight the tunability of topological transport in two-dimensional kagome magnets and provide new insights into the interplay between band topology, dimensionality and magnetic order.

关键词: kagome materials, anomalous Hall effect, ferromagnetism, Lifshitz transition

Abstract: Fe$_{3}$Sn$_{2}$, a ferromagnetic metal with a kagome lattice, serves as an ideal platform for exploring topological electronic states and Berry curvature due to its unique band structure. However, systematic reports on the transport properties of Fe$_{3}$Sn$_{2}$ nanosheets remain scarce. We present temperature-dependent transport property measurements of Fe$_{3}$Sn$_{2}$ nanosheets synthesized via chemical vapor deposition on Si/SiO$_{2}$ substrates. The samples exhibit a robust anomalous Hall effect from 40 K to 300 K, along with a magnetoresistance sign reversal at 40 K at high magnetic fields, indicating a spin reorientation from in-plane to out-of-plane. Notably, a sharp crossover in the dominant transport contribution from electrons to holes near 200 K is observed, accompanied by distinct anomalous Hall behaviors in the two regimes, indicating a temperature-induced Lifshitz transition within the multi-band system. This divergence is potentially linked to a topological reconstruction of the Fermi surface across the transition. Our findings highlight the tunability of topological transport in two-dimensional kagome magnets and provide new insights into the interplay between band topology, dimensionality and magnetic order.

Key words: kagome materials, anomalous Hall effect, ferromagnetism, Lifshitz transition

中图分类号:  (Other ferromagnetic metals and alloys)

  • 75.50.Cc
73.43.Qt (Magnetoresistance) 87.15.Zg (Phase transitions)