Temperature-dependent magnetotransport properties of CoFe2O4/Pt heterostructure

doi:10.1088/1674-1056/ae181c

中国物理B ›› 2026, Vol. 35 ›› Issue (1): 17502-017502.doi: 10.1088/1674-1056/ae181c

• • 上一篇

Temperature-dependent magnetotransport properties of CoFe₂O₄/Pt heterostructure

Haomang He(何浩茫), Ruijie Xu(徐睿劼), Anke Song(宋安柯), Zhongqiang Chen(陈中强), and Xuefeng Wang(王学锋)^†

State Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2025-09-01 修回日期:2025-10-11 接受日期:2025-10-28 发布日期:2025-12-29
通讯作者: Xuefeng Wang E-mail:xfwang@nju.edu.cn
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 62525406, T2394473, 624B2070, and 62274085), the National Key Research and Development Program of China (Grant No. 2022YFA1402404), and the Innovation Program for Quantum Science and Technology of China (Grant No. 2024ZD0301300).

Temperature-dependent magnetotransport properties of CoFe₂O₄/Pt heterostructure

Haomang He(何浩茫), Ruijie Xu(徐睿劼), Anke Song(宋安柯), Zhongqiang Chen(陈中强), and Xuefeng Wang(王学锋)^†

State Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Received:2025-09-01 Revised:2025-10-11 Accepted:2025-10-28 Published:2025-12-29
Contact: Xuefeng Wang E-mail:xfwang@nju.edu.cn
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 62525406, T2394473, 624B2070, and 62274085), the National Key Research and Development Program of China (Grant No. 2022YFA1402404), and the Innovation Program for Quantum Science and Technology of China (Grant No. 2024ZD0301300).

摘要/Abstract

摘要： We report on the growth of CoFe₂O₄/Pt heterostructure and their magnetotransport properties. The magnetoresistance under high magnetic fields exhibits a sign change when the temperature increases from 5 K to 10 K. The anomalous Hall resistance decreases as the temperature increases. Furthermore, angle-dependent magnetoresistance indicates that the observed magnetotransport behaviors originate from the competition between the spin Hall magnetoresistance and magnetic proximity effect.

关键词: magnetotransport, magnetoresistance, anomalous Hall effect, CoFe₂O₄/Pt heterostructure, magnetic proximity effect

Abstract: We report on the growth of CoFe₂O₄/Pt heterostructure and their magnetotransport properties. The magnetoresistance under high magnetic fields exhibits a sign change when the temperature increases from 5 K to 10 K. The anomalous Hall resistance decreases as the temperature increases. Furthermore, angle-dependent magnetoresistance indicates that the observed magnetotransport behaviors originate from the competition between the spin Hall magnetoresistance and magnetic proximity effect.

Key words: magnetotransport, magnetoresistance, anomalous Hall effect, CoFe₂O₄/Pt heterostructure, magnetic proximity effect

中图分类号: (Spin waves)

75.30.Ds

76.50.+g (Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance) 31.15.aq (Strongly correlated electron systems: generalized tight-binding method)

Haomang He(何浩茫), Ruijie Xu(徐睿劼), Anke Song(宋安柯), Zhongqiang Chen(陈中强), and Xuefeng Wang(王学锋). Temperature-dependent magnetotransport properties of CoFe₂O₄/Pt heterostructure[J]. 中国物理B, 2026, 35(1): 17502-017502.

参考文献

[1] Adachi H, Uchida K, Saitoh E and Maekawa S 2013 Rep. Prog. Phys. 76 036501
[2] Manchon A, Zelezny J, Miron I M, Jungwirth T, Sinova J, Thiaville A, Garello K and Gambardella P 2019 Rev. Mod. Phys. 91 035004
[3] Ando K, Takahashi S, Ieda J, Kajiwara Y, Nakayama H, Yoshino T, Harii K, Fujikawa Y, Matsuo M, Maekawa S and Saitoh E 2011 J. Appl. Phys. 109 103913
[4] Vaz D C, Barthel emy A and Bibes M 2018 Jpn. J. Appl. Phys. 57 0902A4
[5] Ando K, Takahashi S, Harii K, Sasage K, Ieda J, Maekawa S and Saitoh E 2008 Phys. Rev. Lett. 101 036601
[6] Kimura T, Otani Y, Sato T, Takahashi S and Maekawa S 2007 Phys. Rev. Lett. 98 156601
[7] Valenzuela S O and Tinkham M 2006 Nature 442 176
[8] Hahn C, de Loubens G, Klein O, Viret M, Naletov V V and Ben Youssef J 2013 Phys. Rev. B 87 174417
[9] Vlietstra N, Shan J, Castel V, Ben Youssef J, Bauer G E W and van Wees B J 2013 Appl. Phys. Lett. 103 032401
[10] Vlietstra N, Shan J, Castel V, van Wees B J and Ben Youssef J 2013 Phys. Rev. B 87 184421
[11] Velez S, Bedoya-Pinto A, Yan W J, Hueso L E and Casanova F 2016 Phys. Rev. B 94 174405
[12] Chen Y T, Takahashi S, Nakayama H, Althammer M, Goennenwein S T B, Saitoh E and Bauer G E W 2013 Phys. Rev. B 87 144411
[13] Nakayama H, Althammer M, Chen Y T, Uchida K, Kajiwara Y, Kikuchi D, Ohtani T, Geprags S, Opel M, Takahashi S, Gross R, Bauer G E W, Goennenwein S T B and Saitoh E 2013 Phys. Rev. Lett. 110 206601
[14] Avci C O, Quindeau A, Pai C F, Mann M, Caretta L, Tang A S, Onbasli M C, Ross C A and Beach G S D 2017 Nat. Mater. 16 309
[15] Wu H, Huang L, Fang C, Yang B S, Wan C H, Yu G Q, Feng J F, Wei H X and Han X F 2018 Phys. Rev. Lett. 120 097205
[16] Yanagihara H, Uwabo K, Minagawa M, Kita E and Hirota N 2011 J. Appl. Phys. 109 07C122
[17] Li Z L, Lyu Y, Ran Z, Wang Y J, Zhang Y, Lu N P, Wang M, Sassi M, Ha T D, N’Diaye A T, Shafer P, Pearce C, Rosso K, Arenholz E, Juang J Y, He Q, Chu Y H, Luo W D and Yu P 2023 Adv. Funct. Mater. 33 2212298
[18] Moitra D, Hazra S, Ghosh B K, Jani R K, Patra M K, Vadera S R and Ghosh N N 2015 RSC Adv. 5 51130
[19] Khan I and Hong J 2024 J. Mater. Chem. C 12 17658
[20] Isasa M, Velez S, Sagasta E, Bedoya-Pinto A, Dix N, S anchez F, Hueso L E, Fontcuberta J and Casanova F 2016 Phys. Rev. Appl. 6 034007
[21] Slonczewski J C 1958 Phys. Rev. 110 1341
[22] Suzuki Y, vanDover R B, Gyorgy E M, Phillips J M, Korenivski V, Werder D J, Chen C H, Cava R J, Krajewski J J, Peck W F and Do K B 1996 Appl. Phys. Lett. 68 714
[23] Isasa M, Bedoya-Pinto A, Velez S, Golmar F, S anchez F, Hueso L E, Fontcuberta J and Casanova F 2014 Appl. Phys. Lett. 105 142402
[24] Tainosho T, Niizeki T, Inoue J, Sharmin S, Kita E and Yanagihara H 2017 AIP Adv. 7 055936
[25] Collet M, Mattana R, Moussy J B, Ollefs K, Collin S, Deranlot C, Anane A, Cros V, Petroff F, Wilhelm F and Rogalev A 2017 Appl. Phys. Lett. 111 202401
[26] Vasili H B, Gamino M, Gazquez J, Sanchez F, Valvidares M, Gargiani P, Pellegrin E and Fontcuberta J 2018 ACS Appl. Mater. Interfaces 10 12031
[27] Amamou W, Pinchuk I V, Trout A H, Williams R E A, Antolin N, Goad A, O’Hara D J, Ahmed A S, Windl W, McComb D W and Kawakami R K 2018 Phys. Rev. Mater. 2 011401
[28] Peddis D, Cannas C, Piccaluga G, Agostinelli E and Fiorani D 2010 Nanotechnology 21 125705
[29] Kim D H, Lee H J, Kim G, Koo Y S, Jung J H, Shin H J, Kim J Y and Kang J S 2009 Phys. Rev. B 79 033402
[30] Kotani A 2008 Phys. Rev. B 78 195115
[31] Chen J G 1997 Surf. Sci. Rep. 30 1
[32] Chen C T, Idzerda Y U, Lin H J, Smith N V, Meigs G, Chaban E, Ho G H, Pellegrin E and Sette F 1995 Phys. Rev. Lett. 75 152
[33] Wu R Q and Freeman A J 1994 Phys. Rev. Lett. 73 1994
[34] Guo G Y, Ebert H, Temmerman W M and Durham P J 1994 Phys. Rev. B 50 3861
[35] Wu H, Zhang Q, Wan C, Ali S S, Yuan Z, You L, Wang J, Choi Y S and Han X 2015 IEEE Trans. Magn. 51 4100104
[36] Guo J Q, Meng K K, Zhang T Z, Liu J J, Chen J K, Wu Y, Xu X G and Jiang Y 2022 Appl. Phys. Lett. 121 142403
[37] Xia T R, Yang X T, Zhang Y F, Liu X Q, Cai X Y, Liu C, Yao Q, Kou X F and Wang W B 2024 Chin. Phys. B 33 087504
[38] Ding S L, Liang Z Y, Yun C, Wu R, Xue M Z, Lin Z C, Ross A, Becker S, Yang W Y, Ma X B, Chen D F, Sun K, Jakob G, Klaui M and Yang J B 2021 Phys. Rev. B 104 224410
[39] Shao Q M, Grutter A, Liu Y W, Yu G Q, Yang C Y, Gilbert D A, Arenholz E, Shafer P, Che X Y, Tang C, Aldosary M, Navabi A, He Q L, Kirby B J, Shi J and Wang K L 2019 Phys. Rev. B 99 104401
[40] Jin Q, Yang M, Song G Z, Zhao N, Chen S R, Hong H T, Cui T, Rong D K, Wang Q Y, Fan Y Y, Ge C, Wang C, Bi J C, Cao Y W, Wu L S, Wang S M, Jin K J, Cheng Z G and Guo E J 2024 Chin. Phys. Lett. 41 027402
[41] Bai Y, Wang Z, Lei N, Muhammad W, Xiang L F, Li Q, Lai H L, Zhu Y Y, Wang W B, Guo H W, Yin L F, Wu R Q and Shen J 2022 Chin. Phys. Lett. 39 108501
[42] Dong X J and Zhang C W 2024 Chin. Phys. B 33 077303
[43] Althammer M, Meyer S, Nakayama H, et al. 2013 Phys. Rev. B 87 224401
[44] Liang X, Zhu Y P, Peng B, Deng L J, Xie J L, Lu H P, Wu M Z and Bi L 2016 ACS Appl. Mater. Interfaces 8 8175
[45] Hahn C, de Loubens G, Klein O, Viret M, Naletov V V and Ben Youssef J 2013 Phys. Rev. B 87 174417
[46] Sagasta E, Omori Y, Isasa M, Gradhand M, Hueso L E, Niimi Y, Otani Y and Casanova F 2016 Phys. Rev. B 94 060412

Temperature-dependent magnetotransport properties of CoFe₂O₄/Pt heterostructure

Temperature-dependent magnetotransport properties of CoFe₂O₄/Pt heterostructure

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Ke Shi(史可), Wenshan Hong(洪文山), Yang Li(李阳), Minjie Zhang(张敏杰), Yongqi Han(韩永琦), Yu Zhao(赵宇), Jiating Wu(吴嘉挺), Ze Wang(王泽), Langsheng Ling(凌浪生), Chuanying Xi(郗传英), Li Pi(皮雳), Huiqian Luo(罗会仟), and Zhaosheng Wang(王钊胜). Doping dependence of resistivity, upper critical field and its anisotropy in overdoped Ba_1-xK_xFe₂As₂ (x = 0.6-1) single crystals[J]. 中国物理B, 2026, 35(1): 17401-017401.
[2]	Cundong Li(李存东), Binbin Ruan(阮彬彬), Qingxin Dong(董庆新), Jianli Bai(白建利), Libo Zhang(张黎博), Qiaoyu Liu(刘乔宇), Jingwen Cheng(程靖雯), Pinyu Liu(刘品宇), Yu Huang(黄宇), Yingrui Sun(孙英睿), Zhian Ren(任治安), and Genfu Chen(陈根富). Extremely large magnetoresistance in single-crystalline ZrBi₂[J]. 中国物理B, 2025, 34(9): 97307-097307.
[3]	Ke Zhu(祝轲), Qi Qi(齐琦), Yaofeng Xie(谢耀锋), Lulu Pan(潘禄禄), Senhao Lv(吕森浩), Guojing Hu(胡国静), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Lihong Bao(鲍丽宏), Ying Zhang(张颖), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). Tunable colossal negative magnetoresistance of topological semimetal EuB₆ thin sheets[J]. 中国物理B, 2025, 34(9): 97308-097308.
[4]	Yaofeng Xie(谢耀锋), Senhao Lv(吕森浩), Qi Qi(齐琦), Guojing Hu(胡国静), Ke Zhu(祝轲), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Ruwen Wang(王汝文), Chenyu Bai(白晨宇), Lihong Bao(鲍丽宏), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V₅S₈ crystals[J]. 中国物理B, 2025, 34(8): 87303-087303.
[5]	Zi-Cheng Tao(陶咨成), Yi-Xuan Luo(罗伊轩), Shi-Hao Zhang(张世豪), and Yan-Feng Guo(郭艳峰). Multiple anomalous Hall effect in kagome metal TbV₅MnSn₆[J]. 中国物理B, 2025, 34(8): 87103-087103.
[6]	Jie Dong(董洁), Shuai Mi(米帅), Meihong Liu(刘美宏), Huiliang Wu(吴辉亮), Jinxuan Shi(石金暄), Huifang Qiao(乔慧芳), Qian Zhao(赵乾), Teng-Fei Zhang(张腾飞), Chenbo Zhao(赵晨博), Jianbo Wang(王建波), and Qingfang Liu(刘青芳). Modulation of exchange bias in Py/IrMn films by surface acoustic waves[J]. 中国物理B, 2025, 34(8): 88502-088502.
[7]	Huiyuan Guo(郭慧圆), Jialiang Jiang(姜家梁), Boyu Zou(邹博宇), Jie Cui(崔杰), Qinglin Wang(王庆林), Haiwa Zhang(张海娃), Guangyu Wang(王光宇), Guozhao Zhang(张国召), Kai Wang(王凯), Yinwei Li(李印威), and Cailong Liu(刘才龙). Magnetotransport properties of two-dimensional tellurium at high pressure[J]. 中国物理B, 2025, 34(8): 87301-087301.
[8]	Qi Qi(齐琦), Senhao Lv(吕森浩), Ke Zhu(祝轲), Yaofeng Xie(谢耀锋), Guojing Hu(胡国静), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Yang Yang(杨洋), Lihong Bao(鲍丽宏), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). In-plane negative magnetoresistance and quantum oscillations in van der Waals antiferromagnet DyTe₃[J]. 中国物理B, 2025, 34(7): 77305-077305.
[9]	Zhongqiang Chen(陈中强), Zhe Wang(王喆), Kankan Xu(徐侃侃), Xu Zhang(张旭), Ruijie Xu(徐睿劼), and Xuefeng Wang(王学锋). Magnetotransport properties of large-scale PtTe₂ Dirac semimetal films grown by pulsed laser deposition[J]. 中国物理B, 2025, 34(7): 77401-077401.
[10]	Ning Dai(戴凝) and Bin Zhou(周斌). Current density in anomalous Hall effect regime under weak scattering[J]. 中国物理B, 2025, 34(7): 77301-077301.
[11]	Wen-Xiao Wang(王文晓), Yi-Wen Liu(刘亦文), and Lin He(何林). Quantum anomalous Hall effect in twisted bilayer graphene[J]. 中国物理B, 2025, 34(4): 47301-047301.
[12]	Zhuangzhuang Qu(曲壮壮), Zhihao Chen(陈志豪), Xiangyan Han(韩香岩), Zhiyu Wang(王知雨), Zhuoxian Li(李卓贤), Qianling Liu(刘倩伶), Wenjun Zhao(赵文俊), Kenji Watanabe, Takashi Taniguchi, Zhi-Gang Cheng(程智刚), Zizhao Gan(甘子钊), and Jianming Lu(路建明). Anomalous Hall effect in Bernal tetralayer graphene enhanced by spin-orbit interaction[J]. 中国物理B, 2025, 34(3): 37201-037201.
[13]	Xueqin Zhao(赵雪芹), Jinou Dong(董金瓯), Lingfeng Xie(谢玲凤), Xun Pan(潘洵), Haoyuan Tang(唐浩原), Zhicheng Xu(徐之程), and Fanlong Ning(宁凡龙). Chemical pressure manipulation of ferromagnetism in magnetic semiconductor Ba(Zn,Mn,Cu)₂As₂[J]. 中国物理B, 2025, 34(10): 107510-107510.
[14]	Detong Wu(吴德桐), Jianwei Qin(秦建伟), and Bing Shen(沈冰). Tunable anomalous Hall effect and anisotropic magnetism in In-doped TbMn₆Sn₆ kagome magnets[J]. 中国物理B, 2025, 34(10): 107511-107511.
[15]	Bo-Wen Chen(陈博文) and Bing Shen(沈冰). Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal Nb_xZr_1-xCo₂Sn[J]. 中国物理B, 2024, 33(8): 87501-087501.