中国物理B ›› 2025, Vol. 34 ›› Issue (9): 99902-099902.doi: 10.1088/1674-1056/adfec0

• • 上一篇    

Corrigendum to “High-throughput discovery of kagome materials in transition metal oxide monolayers”

Renhong Wang(王人宏)1,2, Cong Wang(王聪)1,2,†, Ruixuan Li(李睿宣)1,3, Deping Guo(郭的坪)4,1, Jiaqi Dai(戴佳琦)1,2, Canbo Zong(宗灿波)1,2, Weihan Zhang(张伟涵)1,2, and Wei Ji(季威)1,2,‡   

  1. 1 Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics, Renmin University of China, Beijing 100872, China;
    2 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China;
    3 Beijing No. 35 High School, Beijing 100037, China;
    4 College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
  • 收稿日期:2025-08-22 接受日期:2025-08-25 出版日期:2025-08-21 发布日期:2025-08-28
  • 通讯作者: Cong Wang, Wei Ji E-mail:wcphys@ruc.edu.cn;wji@ruc.edu.cn
  • 基金资助:
    corrigendum|monolayers|two-dimensional kagome materials|transition metal oxides|high-throughput calculations

Corrigendum to “High-throughput discovery of kagome materials in transition metal oxide monolayers”

Renhong Wang(王人宏)1,2, Cong Wang(王聪)1,2,†, Ruixuan Li(李睿宣)1,3, Deping Guo(郭的坪)4,1, Jiaqi Dai(戴佳琦)1,2, Canbo Zong(宗灿波)1,2, Weihan Zhang(张伟涵)1,2, and Wei Ji(季威)1,2,‡   

  1. 1 Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics, Renmin University of China, Beijing 100872, China;
    2 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China;
    3 Beijing No. 35 High School, Beijing 100037, China;
    4 College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
  • Received:2025-08-22 Accepted:2025-08-25 Online:2025-08-21 Published:2025-08-28
  • Contact: Cong Wang, Wei Ji E-mail:wcphys@ruc.edu.cn;wji@ruc.edu.cn

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摘要： The labels of VU1 and VU2 in Fig. 1(b) of the paper [Chin. Phys. B 34 046801 (2025)] were not correctly placed. The correct figure is provided. This modification does not affect the result presented in the paper.

关键词: corrigendum, monolayers, two-dimensional kagome materials, transition metal oxides, high-throughput calculations

Abstract: The labels of VU1 and VU2 in Fig. 1(b) of the paper [Chin. Phys. B 34 046801 (2025)] were not correctly placed. The correct figure is provided. This modification does not affect the result presented in the paper.

Key words: corrigendum, monolayers, two-dimensional kagome materials, transition metal oxides, high-throughput calculations

中图分类号:  (Errata and other corrections)

  • 99.10.-x
68.35.Dv (Composition, segregation; defects and impurities) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 73.22.-f (Electronic structure of nanoscale materials and related systems) 75.70.Ak (Magnetic properties of monolayers and thin films)