中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97304-097304.doi: 10.1088/1674-1056/ade4af

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Doping-induced magnetic and topological transitions in Mn2X2Te5 (X = Bi, Sb) bilayers

Wei Chen(陈威)1, Chuhan Tang(唐楚涵)1, Chao-Fei Liu(刘超飞)2, and Mingxing Chen(陈明星)1,3,4†   

  1. 1 Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China;
    2 School of Science, Jiangxi University of Science and Technology, Ganzhou 341000, China;
    3 Hunan Research Center of the Basic Discipline for Quantum Effects and Quantum Technologies, Changsha 410081, China;
    4 State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
  • 收稿日期:2025-03-27 修回日期:2025-05-28 接受日期:2025-06-16 出版日期:2025-08-21 发布日期:2025-09-03
  • 通讯作者: Mingxing Chen E-mail:mxchen@hunnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grants Nos. 12174098 and 12574262), and the Major Fundamental Research Program of Hunan Province (Grants No. 2025ZYJ004), and the State Key Laboratory of Powder Metallurgy, Central South University, China.

Doping-induced magnetic and topological transitions in Mn2X2Te5 (X = Bi, Sb) bilayers

Wei Chen(陈威)1, Chuhan Tang(唐楚涵)1, Chao-Fei Liu(刘超飞)2, and Mingxing Chen(陈明星)1,3,4†   

  1. 1 Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China;
    2 School of Science, Jiangxi University of Science and Technology, Ganzhou 341000, China;
    3 Hunan Research Center of the Basic Discipline for Quantum Effects and Quantum Technologies, Changsha 410081, China;
    4 State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
  • Received:2025-03-27 Revised:2025-05-28 Accepted:2025-06-16 Online:2025-08-21 Published:2025-09-03
  • Contact: Mingxing Chen E-mail:mxchen@hunnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grants Nos. 12174098 and 12574262), and the Major Fundamental Research Program of Hunan Province (Grants No. 2025ZYJ004), and the State Key Laboratory of Powder Metallurgy, Central South University, China.

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摘要： We investigate the magnetic and topological properties of Mn$_{2}X_{2}$Te$_{5}$ ($X = {\rm Bi}$, Sb) using first-principles calculations. We find that both Mn$_{2}$Bi$_{2}$Te$_{5}$ and Mn$_{2}$Sb$_{2}$Te$_{5}$ bilayers exhibit A-type antiferromagnetic order, which can be understood based on the Goodenough-Kanamori-Anderson rules. We further find that an appropriate hole doping can induce a transition from the A-type antiferromagnetic phase to the ferromagnetic phase in these systems, which also experience a transition from a normal insulator to a quantum anomalous Hall phase. Our study thus demonstrates that tunable magnetism and band topology can be achieved in Mn$_{2}X_{2}$Te$_{5}$, which may be utilized in the design of new functional electronic devices.

关键词: two-dimensional (2D) ferromagnetism, first-principles calculations, band topology

Abstract: We investigate the magnetic and topological properties of Mn$_{2}X_{2}$Te$_{5}$ ($X = {\rm Bi}$, Sb) using first-principles calculations. We find that both Mn$_{2}$Bi$_{2}$Te$_{5}$ and Mn$_{2}$Sb$_{2}$Te$_{5}$ bilayers exhibit A-type antiferromagnetic order, which can be understood based on the Goodenough-Kanamori-Anderson rules. We further find that an appropriate hole doping can induce a transition from the A-type antiferromagnetic phase to the ferromagnetic phase in these systems, which also experience a transition from a normal insulator to a quantum anomalous Hall phase. Our study thus demonstrates that tunable magnetism and band topology can be achieved in Mn$_{2}X_{2}$Te$_{5}$, which may be utilized in the design of new functional electronic devices.

Key words: two-dimensional (2D) ferromagnetism, first-principles calculations, band topology

中图分类号:  (Electronic structure of nanoscale materials and related systems)

  • 73.22.-f
73.20.At (Surface states, band structure, electron density of states) 75.70.Ak (Magnetic properties of monolayers and thin films) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)