中国物理B ›› 2025, Vol. 34 ›› Issue (3): 37201-037201.doi: 10.1088/1674-1056/adb411

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Anomalous Hall effect in Bernal tetralayer graphene enhanced by spin-orbit interaction

Zhuangzhuang Qu(曲壮壮)1, Zhihao Chen(陈志豪)2,3, Xiangyan Han(韩香岩)1, Zhiyu Wang(王知雨)1, Zhuoxian Li(李卓贤)1, Qianling Liu(刘倩伶)1, Wenjun Zhao(赵文俊)1, Kenji Watanabe4, Takashi Taniguchi4, Zhi-Gang Cheng(程智刚)2,3,†, Zizhao Gan(甘子钊)1, and Jianming Lu(路建明)1,‡   

  1. 1 State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China;
    4 National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
  • 收稿日期:2025-01-22 修回日期:2025-02-05 接受日期:2025-02-08 出版日期:2025-03-15 发布日期:2025-03-15
  • 通讯作者: Zhi-Gang Cheng, Jianming Lu E-mail:zgcheng@iphy.ac.cn;jmlu@pku.edu.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant Nos. 2021YFA1400100 and 2024YFA1409700) and the National Natural Science Foudation of China (Grant Nos. 12374168 and T2325026).

Anomalous Hall effect in Bernal tetralayer graphene enhanced by spin-orbit interaction

Zhuangzhuang Qu(曲壮壮)1, Zhihao Chen(陈志豪)2,3, Xiangyan Han(韩香岩)1, Zhiyu Wang(王知雨)1, Zhuoxian Li(李卓贤)1, Qianling Liu(刘倩伶)1, Wenjun Zhao(赵文俊)1, Kenji Watanabe4, Takashi Taniguchi4, Zhi-Gang Cheng(程智刚)2,3,†, Zizhao Gan(甘子钊)1, and Jianming Lu(路建明)1,‡   

  1. 1 State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 University of Chinese Academy of Sciences, Beijing 100049, China;
    4 National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
  • Received:2025-01-22 Revised:2025-02-05 Accepted:2025-02-08 Online:2025-03-15 Published:2025-03-15
  • Contact: Zhi-Gang Cheng, Jianming Lu E-mail:zgcheng@iphy.ac.cn;jmlu@pku.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant Nos. 2021YFA1400100 and 2024YFA1409700) and the National Natural Science Foudation of China (Grant Nos. 12374168 and T2325026).

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摘要： Spin-orbit interaction (SOI) can be introduced by the proximity effect to modulate the electronic properties of graphene-based heterostructures. In this work, we stack trilayer WSe$_{2}$ on Bernal tetralayer graphene to investigate the influence of SOI on the anomalous Hall effect (AHE). In this structurally asymmetric device, by comparing the magnitude of AHE at positive and negative displacement fields, we find that AHE is strongly enhanced by bringing electrons in proximity to the WSe$_{2}$ layer. Meanwhile, the enhanced AHE signal persists up to 80 K, providing important routes for topological device applications at high temperatures.

关键词: anomalous Hall effect, proximity effect, Bernal tetralayer graphene, spin-orbit interaction

Abstract: Spin-orbit interaction (SOI) can be introduced by the proximity effect to modulate the electronic properties of graphene-based heterostructures. In this work, we stack trilayer WSe$_{2}$ on Bernal tetralayer graphene to investigate the influence of SOI on the anomalous Hall effect (AHE). In this structurally asymmetric device, by comparing the magnitude of AHE at positive and negative displacement fields, we find that AHE is strongly enhanced by bringing electrons in proximity to the WSe$_{2}$ layer. Meanwhile, the enhanced AHE signal persists up to 80 K, providing important routes for topological device applications at high temperatures.

Key words: anomalous Hall effect, proximity effect, Bernal tetralayer graphene, spin-orbit interaction

中图分类号:  (Electronic transport in graphene)

  • 72.80.Vp
73.40.-c (Electronic transport in interface structures)