中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97701-097701.doi: 10.1088/1674-1056/adee8a
Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures
Yin Luo(罗寅)1, Keyu Liu(刘科宇)1, Hao Yuan(袁昊)1, Zhiwen Zhang(张质文)1, Chao Han(韩超)1,2,†, Xiaoyan Tang(汤晓燕)1, Qingwen Song(宋庆文)1,2, and Yuming Zhang(张玉明)1,2
- 1 Xidian University, Xi'an 710071, China;
2 Xidian-Wuhu Research Institute, Wuhu 241002, China
Experimental demonstration and mechanism study of single-event gate leakage current in 4H-SiC power MOSFET with top oxide and double P-well structures
Yin Luo(罗寅)1, Keyu Liu(刘科宇)1, Hao Yuan(袁昊)1, Zhiwen Zhang(张质文)1, Chao Han(韩超)1,2,†, Xiaoyan Tang(汤晓燕)1, Qingwen Song(宋庆文)1,2, and Yuming Zhang(张玉明)1,2
- 1 Xidian University, Xi'an 710071, China;
2 Xidian-Wuhu Research Institute, Wuhu 241002, China
摘要： This work proposes and fabricates the 4H-SiC power MOSFET with top oxide and double P-well (TODP-MOSFET) to enhance the single-event radiation tolerance of the gate oxide. Simulation results suggest that the proposed TODP structure reduces the peak electric field within the oxide and minimizes the sensitive region by more than 70% compared to C-MOSFETs. Experimental results show that the gate degradation voltage of the TODP-MOSFET is higher than that of the C-MOSFET, and the gate leakage current is reduced by 95% compared to the C-MOSFET under heavy-ion irradiation with a linear energy transfer (LET) value exceeding 75 MeV$\cdot $cm$^{2}$/mg.
中图分类号: (For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))
- 77.55.dj