Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

doi:10.1088/1674-1056/acad6b

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98505-098505.doi: 10.1088/1674-1056/acad6b

Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

Jia-Hao Chen(陈嘉豪)¹, Ying Wang(王颖)^1,†, Xin-Xing Fei(费新星)², Meng-Tian Bao(包梦恬)¹, and Fei Cao(曹菲)¹

1 College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;
2 The Yangzhou Marine Electronic Instrument Institute, Yangzhou 225001, China

收稿日期:2022-08-15 修回日期:2022-12-11 接受日期:2022-12-21 发布日期:2023-09-01
通讯作者: Ying Wang E-mail:wangying7711@yahoo.com
基金资助:
Project supported by the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814), the National Natural Science Foundation of China (Grant No. 61904045), and Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ20F040004).

Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

Jia-Hao Chen(陈嘉豪)¹, Ying Wang(王颖)^1,†, Xin-Xing Fei(费新星)², Meng-Tian Bao(包梦恬)¹, and Fei Cao(曹菲)¹

1 College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;
2 The Yangzhou Marine Electronic Instrument Institute, Yangzhou 225001, China

Received:2022-08-15 Revised:2022-12-11 Accepted:2022-12-21 Published:2023-09-01
Contact: Ying Wang E-mail:wangying7711@yahoo.com
Supported by:
Project supported by the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814), the National Natural Science Foundation of China (Grant No. 61904045), and Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ20F040004).

摘要/Abstract

摘要： A method to improve the surge current capability of silicon carbide (SiC) merged PiN Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal simulations. When compared with a conventional MPS diode, the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+ surface, which can avoid the formation of local hotspots during the surge process. The Silvaco simulation results show that the proposed structure has a 20.29% higher surge capability and a 15.06% higher surge energy compared with a conventional MPS diode. The bipolar on-state voltage of the proposed structure is 4.69 V, which is 56.29% lower than that of a conventional MPS diode, enabling the device to enter the bipolar mode earlier during the surge process. Furthermore, the proposed structure can suppress the occurrence of 'snapback' phenomena when switching from the unipolar to the bipolar operation mode. In addition, an analysis of the surge process of MPS diodes is carried out in detail.

关键词: merged PiN Schottky (MPS) diode, silicon carbide (SiC), surge capability, surge energy, reliability

Abstract: A method to improve the surge current capability of silicon carbide (SiC) merged PiN Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal simulations. When compared with a conventional MPS diode, the proposed structure has a more uniform current distribution during bipolar conduction due to the help of the continuous P+ surface, which can avoid the formation of local hotspots during the surge process. The Silvaco simulation results show that the proposed structure has a 20.29% higher surge capability and a 15.06% higher surge energy compared with a conventional MPS diode. The bipolar on-state voltage of the proposed structure is 4.69 V, which is 56.29% lower than that of a conventional MPS diode, enabling the device to enter the bipolar mode earlier during the surge process. Furthermore, the proposed structure can suppress the occurrence of 'snapback' phenomena when switching from the unipolar to the bipolar operation mode. In addition, an analysis of the surge process of MPS diodes is carried out in detail.

Key words: merged PiN Schottky (MPS) diode, silicon carbide (SiC), surge capability, surge energy, reliability

中图分类号: (Semiconductor devices)

85.30.-z

85.30.De (Semiconductor-device characterization, design, and modeling)

Jia-Hao Chen(陈嘉豪), Ying Wang(王颖), Xin-Xing Fei(费新星), Meng-Tian Bao(包梦恬), and Fei Cao(曹菲). Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness[J]. 中国物理B, 2023, 32(9): 98505-098505.

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Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness

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