Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures

doi:10.1088/1674-1056/adc97e

中国物理B ›› 2025, Vol. 34 ›› Issue (7): 77105-077105.doi: 10.1088/1674-1056/adc97e

Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures

Fuzhou Wen(文福洲)¹, Qianshu Wu(吴千树)¹, Jinwei Zhang(张津玮)¹, Zhuoran Luo(罗卓然)¹, Senyuan Xu(许森源)¹, Hao Jiang(江灏)¹, and Yang Liu(刘扬)^1,2,†

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
2 Sun Yat sen University Shenzhen Research Institute, Shenzhen 518057, China

收稿日期:2025-01-16 修回日期:2025-03-19 接受日期:2025-04-07 出版日期:2025-06-18 发布日期:2025-07-07
通讯作者: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3604203), the Key Research and Development Program of Guangdong Province, China (Grant No. 2024B0101060002), and the Key Research and Development Program of Shenzhen City, China (Grant No. JCYJ20241202130036043).

Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures

Fuzhou Wen(文福洲)¹, Qianshu Wu(吴千树)¹, Jinwei Zhang(张津玮)¹, Zhuoran Luo(罗卓然)¹, Senyuan Xu(许森源)¹, Hao Jiang(江灏)¹, and Yang Liu(刘扬)^1,2,†

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
2 Sun Yat sen University Shenzhen Research Institute, Shenzhen 518057, China

Received:2025-01-16 Revised:2025-03-19 Accepted:2025-04-07 Online:2025-06-18 Published:2025-07-07
Contact: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3604203), the Key Research and Development Program of Guangdong Province, China (Grant No. 2024B0101060002), and the Key Research and Development Program of Shenzhen City, China (Grant No. JCYJ20241202130036043).

摘要/Abstract

摘要： Research on p-channel field-effect transistors (p-FETs) remains limited, primarily due to the significantly lower conductivity of the two-dimensional hole gas (2DHG) compared to the two-dimensional electron gas (2DEG) in n-channel field-effect transistors (n-FETs), which poses a significant challenge for monolithic integration. In this study, we investigate the impact of epitaxial structure parameters on 2DHG properties in p-GaN/AlGaN/GaN heterostructures through semiconductor technology computer-aided design (TCAD) simulations and theoretical calculations, identifying the conditions necessary to achieve high-density 2DHG. Our simulations demonstrate that increasing the p-GaN thickness leads to two critical thicknesses determined by surface states and acceptor ionization concentration: one corresponds to the onset of 2DHG formation, and the other to its saturation. Lowering the donor surface state energy level and increasing the acceptor ionization concentration promote 2DHG formation and saturation, although the saturated density remains independent of surface states. Additionally, a higher Al composition enhances intrinsic ionization due to stronger polarization effects, thereby increasing the 2DHG sheet density. Consequently, to achieve high-density 2DHG in p-GaN/AlGaN/GaN heterostructures, it is essential to increase the Al composition, ensure that the p-GaN thickness exceeds the critical thickness for 2DHG saturation, and maximize the acceptor ionization concentration. This study elucidates the impact of epitaxial structure parameters on 2DHG properties in p-GaN/AlGaN/GaN heterostructures and provides valuable guidance for the optimization of p-FET designs.

关键词: p-GaN/AlGaN/GaN heterostructures, 2DHG, surface states, acceptor doping

Abstract: Research on p-channel field-effect transistors (p-FETs) remains limited, primarily due to the significantly lower conductivity of the two-dimensional hole gas (2DHG) compared to the two-dimensional electron gas (2DEG) in n-channel field-effect transistors (n-FETs), which poses a significant challenge for monolithic integration. In this study, we investigate the impact of epitaxial structure parameters on 2DHG properties in p-GaN/AlGaN/GaN heterostructures through semiconductor technology computer-aided design (TCAD) simulations and theoretical calculations, identifying the conditions necessary to achieve high-density 2DHG. Our simulations demonstrate that increasing the p-GaN thickness leads to two critical thicknesses determined by surface states and acceptor ionization concentration: one corresponds to the onset of 2DHG formation, and the other to its saturation. Lowering the donor surface state energy level and increasing the acceptor ionization concentration promote 2DHG formation and saturation, although the saturated density remains independent of surface states. Additionally, a higher Al composition enhances intrinsic ionization due to stronger polarization effects, thereby increasing the 2DHG sheet density. Consequently, to achieve high-density 2DHG in p-GaN/AlGaN/GaN heterostructures, it is essential to increase the Al composition, ensure that the p-GaN thickness exceeds the critical thickness for 2DHG saturation, and maximize the acceptor ionization concentration. This study elucidates the impact of epitaxial structure parameters on 2DHG properties in p-GaN/AlGaN/GaN heterostructures and provides valuable guidance for the optimization of p-FET designs.

Key words: p-GaN/AlGaN/GaN heterostructures, 2DHG, surface states, acceptor doping

中图分类号: (III-V semiconductors)

71.55.Eq

71.23.An (Theories and models; localized states) 71.55.-i (Impurity and defect levels)

Fuzhou Wen(文福洲), Qianshu Wu(吴千树), Jinwei Zhang(张津玮), Zhuoran Luo(罗卓然), Senyuan Xu(许森源), Hao Jiang(江灏), and Yang Liu(刘扬). Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures[J]. 中国物理B, 2025, 34(7): 77105-077105.

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Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures

Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures

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