中国物理B ›› 2025, Vol. 34 ›› Issue (11): 117201-117201.doi: 10.1088/1674-1056/adf9fc

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Asymmetric gaps of tetralayer graphene unveiled by thermodynamic characterization

Zhuangzhuang Qu(曲壮壮)1,†, Zhuoxian Li(李卓贤)1,†, Boxi Li(李博熙)1,†, Lipeng Hou(侯立芃)2,†, Xianghan Han(韩香岩)1, Qianling Liu(刘倩伶)1, Zhiyu Wang(王知雨)1, Kenji Watanabe3, Takashi Taniguchi3, Yanmeng Shi(史衍猛)2,4,‡, and Jianming Lu(路建明)1,§   

  1. 1 State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    2 State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    3 National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan;
    4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2025-06-11 修回日期:2025-07-21 接受日期:2025-08-11 发布日期:2025-11-13
  • 通讯作者: Yanmeng Shi, Jianming Lu E-mail:ymshi@semi.ac.cn;jmlu@lam.ln.cn
  • 基金资助:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. 123B1037 and 12274402) and the National Key Research and Development Program of China (Grant No. 2024YFA1409700).

Asymmetric gaps of tetralayer graphene unveiled by thermodynamic characterization

Zhuangzhuang Qu(曲壮壮)1,†, Zhuoxian Li(李卓贤)1,†, Boxi Li(李博熙)1,†, Lipeng Hou(侯立芃)2,†, Xianghan Han(韩香岩)1, Qianling Liu(刘倩伶)1, Zhiyu Wang(王知雨)1, Kenji Watanabe3, Takashi Taniguchi3, Yanmeng Shi(史衍猛)2,4,‡, and Jianming Lu(路建明)1,§   

  1. 1 State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    2 State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    3 National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan;
    4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2025-06-11 Revised:2025-07-21 Accepted:2025-08-11 Published:2025-11-13
  • Contact: Yanmeng Shi, Jianming Lu E-mail:ymshi@semi.ac.cn;jmlu@lam.ln.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. 123B1037 and 12274402) and the National Key Research and Development Program of China (Grant No. 2024YFA1409700).

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摘要： Tetralayer graphene has shown several interesting properties such as tunable Lifshitz transitions, helical edge states, and high-temperature anomalous Hall effects. The band structure, which directly relates to these phenomena, has so far been predominantly determined by fitting Landau-level spectra. Here, by characterizing the electronic capacitance, we reveal unprecedented details of its band structure: the energy shift between the heavy- and light-mass band edges in the conduction band is much larger than that in the valence band. Their responses to displacement fields are also distinct: while the former increases monotonically and significantly, the latter first decreases and then increases slightly. Our results suggest that the interlayer interactions and hopping parameters are more complex than previously expected, calling for precise measurements of band structures in various multilayer van der Waals systems.

关键词: quantum capacitance, band structure, Bernal tetralayer graphene, chemical potential

Abstract: Tetralayer graphene has shown several interesting properties such as tunable Lifshitz transitions, helical edge states, and high-temperature anomalous Hall effects. The band structure, which directly relates to these phenomena, has so far been predominantly determined by fitting Landau-level spectra. Here, by characterizing the electronic capacitance, we reveal unprecedented details of its band structure: the energy shift between the heavy- and light-mass band edges in the conduction band is much larger than that in the valence band. Their responses to displacement fields are also distinct: while the former increases monotonically and significantly, the latter first decreases and then increases slightly. Our results suggest that the interlayer interactions and hopping parameters are more complex than previously expected, calling for precise measurements of band structures in various multilayer van der Waals systems.

Key words: quantum capacitance, band structure, Bernal tetralayer graphene, chemical potential

中图分类号:  (Electronic transport in graphene)

  • 72.80.Vp
84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))