Quantum confinement of carriers in the type-I quantum wells structure

doi:10.1088/1674-1056/ad5d99

中国物理B ›› 2024, Vol. 33 ›› Issue (9): 97301-097301.doi: 10.1088/1674-1056/ad5d99

Quantum confinement of carriers in the type-I quantum wells structure

Xinxin Li(李欣欣)^1,2,†, Zhen Deng(邓震)^1,2,3,†, Yang Jiang(江洋)^1,2, Chunhua Du(杜春花)^1,2,3, Haiqiang Jia(贾海强)^1,2,4, Wenxin Wang(王文新)^1,2,4, and Hong Chen(陈弘)^1,2,3,4,‡

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 The Yangtze River Delta Physics Research Center, Liyang 213000, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2024-06-15 修回日期:2024-06-26 接受日期:2024-07-02 发布日期:2024-08-30
通讯作者: Hong Chen E-mail:hchen@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000), and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2021005).

Quantum confinement of carriers in the type-I quantum wells structure

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 The Yangtze River Delta Physics Research Center, Liyang 213000, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2024-06-15 Revised:2024-06-26 Accepted:2024-07-02 Published:2024-08-30
Contact: Hong Chen E-mail:hchen@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000), and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2021005).

摘要/Abstract

摘要： Quantum confinement is recognized to be an inherent property in low-dimensional structures. Traditionally, it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels. However, our previous research has revealed efficient carrier escape in low-dimensional structures, contradicting this conventional understanding. In this study, we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone. By accounting for all wave vectors, we obtain a certain distribution of carrier energy at each quantized energy level, giving rise to the energy subbands. These results enable carriers to escape from the well under the influence of an electric field. Additionally, we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport. Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands, discovering new physical phenomena, and designing novel devices with superior performance.

关键词: energy band, quantum confinement, type-I quantum wells, low-dimensional structures

Abstract: Quantum confinement is recognized to be an inherent property in low-dimensional structures. Traditionally, it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels. However, our previous research has revealed efficient carrier escape in low-dimensional structures, contradicting this conventional understanding. In this study, we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone. By accounting for all wave vectors, we obtain a certain distribution of carrier energy at each quantized energy level, giving rise to the energy subbands. These results enable carriers to escape from the well under the influence of an electric field. Additionally, we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport. Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands, discovering new physical phenomena, and designing novel devices with superior performance.

Key words: energy band, quantum confinement, type-I quantum wells, low-dimensional structures

中图分类号: (Quantum wells)

73.21.Fg

73.20.At (Surface states, band structure, electron density of states) 73.63.-b (Electronic transport in nanoscale materials and structures)

Xinxin Li(李欣欣), Zhen Deng(邓震), Yang Jiang(江洋), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Quantum confinement of carriers in the type-I quantum wells structure[J]. 中国物理B, 2024, 33(9): 97301-097301.

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Quantum confinement of carriers in the type-I quantum wells structure

Quantum confinement of carriers in the type-I quantum wells structure

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