中国物理B ›› 2016, Vol. 25 ›› Issue (8): 86502-086502.doi: 10.1088/1674-1056/25/8/086502

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

Yang Hou(侯阳), Lin-Li Zhu(朱林利)   

  1. Department of Engineering Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2016-03-29 修回日期:2016-04-28 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Lin-Li Zhu E-mail:llzhu@zju.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11302189 and 11321202) and the Doctoral Fund of Ministry of Education of China (Grant No. 20130101120175).

Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

Yang Hou(侯阳), Lin-Li Zhu(朱林利)   

  1. Department of Engineering Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
  • Received:2016-03-29 Revised:2016-04-28 Online:2016-08-05 Published:2016-08-05
  • Contact: Lin-Li Zhu E-mail:llzhu@zju.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11302189 and 11321202) and the Doctoral Fund of Ministry of Education of China (Grant No. 20130101120175).

摘要:

Gallium nitride (GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation (BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of GaN nanostructures in nanoelectronic devices through surface engineering.

关键词: GaN nanofilm, elastic model, quantum confinement, Boltzmann transport equation, size effect, phonon thermal conductivity

Abstract:

Gallium nitride (GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation (BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of GaN nanostructures in nanoelectronic devices through surface engineering.

Key words: GaN nanofilm, elastic model, quantum confinement, Boltzmann transport equation, size effect, phonon thermal conductivity

中图分类号:  (Thermal properties of small particles, nanocrystals, nanotubes, and other related systems)

  • 65.80.-g
63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials) 43.35.Gk (Phonons in crystal lattices, quantum acoustics) 44.10.+i (Heat conduction)