中国物理B ›› 2017, Vol. 26 ›› Issue (12): 127310-127310.doi: 10.1088/1674-1056/26/12/127310

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects

Yang Xie(谢阳), Zhi-Jian Hu(胡智健), Wen-Hao Ding(丁文浩), Xiao-Long Lü(吕小龙), Hang Xie(谢航)   

  1. College of Physics, Chongqing University, Chongqing 401331, China
  • 收稿日期:2017-07-20 修回日期:2017-09-12 出版日期:2017-12-05 发布日期:2017-12-05
  • 通讯作者: Hang Xie E-mail:xiehangphy@cqu.edu.cn

One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects

Yang Xie(谢阳), Zhi-Jian Hu(胡智健), Wen-Hao Ding(丁文浩), Xiao-Long Lü(吕小龙), Hang Xie(谢航)   

  1. College of Physics, Chongqing University, Chongqing 401331, China
  • Received:2017-07-20 Revised:2017-09-12 Online:2017-12-05 Published:2017-12-05
  • Contact: Hang Xie E-mail:xiehangphy@cqu.edu.cn

摘要: In this paper we propose a type of new analytical method to investigate the localized states in the armchair graphene-like nanoribbons. The method is based on the tight-binding model and with a standing wave assumption. The system of armchair graphene-like nanoribbons includes the armchair supercells with arbitrary elongation-type line defects and the semi-infinite nanoribbons. With this method, we analyze many interesting localized states near the line defects in the graphene and boron-nitride nanoribbons. We also derive the analytical expressions and the criteria for the localized states in the semi-infinite nanoribbons.

关键词: graphene nanoribbons, tight-binding model, energy band, localized states

Abstract: In this paper we propose a type of new analytical method to investigate the localized states in the armchair graphene-like nanoribbons. The method is based on the tight-binding model and with a standing wave assumption. The system of armchair graphene-like nanoribbons includes the armchair supercells with arbitrary elongation-type line defects and the semi-infinite nanoribbons. With this method, we analyze many interesting localized states near the line defects in the graphene and boron-nitride nanoribbons. We also derive the analytical expressions and the criteria for the localized states in the semi-infinite nanoribbons.

Key words: graphene nanoribbons, tight-binding model, energy band, localized states

中图分类号:  (Electronic structure of graphene)

  • 73.22.Pr
72.80.Vp (Electronic transport in graphene) 71.15.-m (Methods of electronic structure calculations)