Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires

doi:10.1088/1674-1056/ace157

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 17305-17305.doi: 10.1088/1674-1056/ace157

Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires

Guang-Yu Zhu(祝光宇)^1,2,†, Ji-Ai Ning(宁纪爱)^1,2,†, Jian-Kun Wang(王建坤)^1,2,†, Xin-Jie Liu(刘心洁)^1,2, Jia-Jie Yang(杨佳洁)^1,2, Ben-Chuan Lin(林本川)^1,2,3,‡, and Shuo Wang(王硕)^1,2,3,§

1 Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 International Quantum Academy, Shenzhen 518048, China;
3 Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

收稿日期:2023-03-27 修回日期:2023-06-04 接受日期:2023-06-25 出版日期:2023-12-13 发布日期:2023-12-29
通讯作者: Ben-Chuan Lin, Shuo Wang E-mail:linbc@sustech.edu.cn;wangs6@sustech.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2020YFA0309300 and 2022YFA1403700), the National Natural Science Foundation of China (Grant Nos. 12004158, 12074162, and 91964201), the Key-Area Research and Development Program of Guangdong Province (Grant No. 2018B030327001), Guangdong Provincial Key Laboratory (Grant No. 2019B121203002), and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2022B1515130005).

Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires

1 Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 International Quantum Academy, Shenzhen 518048, China;
3 Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

Received:2023-03-27 Revised:2023-06-04 Accepted:2023-06-25 Online:2023-12-13 Published:2023-12-29
Contact: Ben-Chuan Lin, Shuo Wang E-mail:linbc@sustech.edu.cn;wangs6@sustech.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2020YFA0309300 and 2022YFA1403700), the National Natural Science Foundation of China (Grant Nos. 12004158, 12074162, and 91964201), the Key-Area Research and Development Program of Guangdong Province (Grant No. 2018B030327001), Guangdong Provincial Key Laboratory (Grant No. 2019B121203002), and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2022B1515130005).

摘要/Abstract

摘要： Spin—momentum locking is a key feature of the topological surface state, which plays an important role in spintronics. The electrical detection of current-induced spin polarization protected by the spin—momentum locking in nonmagnetic systems provides a new platform for developing spintronics, while previous studies were mostly based on magnetic materials. In this study, the spin transport measurement of Dirac semimetal Cd₃As₂ was studied by three-terminal geometry, and a hysteresis loop signal with high resistance and low resistance state was observed. The hysteresis was reversed by reversing the current direction, which illustrates the spin—momentum locking feature of Cd₃As₂. Furthermore, we realized the on—off states of the spin signals through electric modulation of the Fermi arc via the three-terminal configuration, which enables the great potential of Cd₃As₂ in spin field-effect transistors.

关键词: topological semimetal, spin—momentum locking, quantum transport, spin field-effect transistor

Abstract: Spin—momentum locking is a key feature of the topological surface state, which plays an important role in spintronics. The electrical detection of current-induced spin polarization protected by the spin—momentum locking in nonmagnetic systems provides a new platform for developing spintronics, while previous studies were mostly based on magnetic materials. In this study, the spin transport measurement of Dirac semimetal Cd₃As₂ was studied by three-terminal geometry, and a hysteresis loop signal with high resistance and low resistance state was observed. The hysteresis was reversed by reversing the current direction, which illustrates the spin—momentum locking feature of Cd₃As₂. Furthermore, we realized the on—off states of the spin signals through electric modulation of the Fermi arc via the three-terminal configuration, which enables the great potential of Cd₃As₂ in spin field-effect transistors.

Key words: topological semimetal, spin—momentum locking, quantum transport, spin field-effect transistor

中图分类号: (Electron states at surfaces and interfaces)

73.20.-r

73.20.At (Surface states, band structure, electron density of states) 73.21.Hb (Quantum wires) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport)

Guang-Yu Zhu(祝光宇), Ji-Ai Ning(宁纪爱), Jian-Kun Wang(王建坤), Xin-Jie Liu(刘心洁), Jia-Jie Yang(杨佳洁), Ben-Chuan Lin(林本川), and Shuo Wang(王硕). Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires[J]. 中国物理B, 2024, 33(1): 17305-17305.

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Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires

Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires

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