Recent progress on valley polarization and valley-polarized topological states in two-dimensional materials

doi:10.1088/1674-1056/ad0713

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 17306-17306.doi: 10.1088/1674-1056/ad0713

所属专题： SPECIAL TOPIC — Valleytronics

Recent progress on valley polarization and valley-polarized topological states in two-dimensional materials

Fei Wang(王斐)¹, Yaling Zhang(张亚玲)¹, Wenjia Yang(杨文佳)¹, Huisheng Zhang(张会生)^1,2,†, and Xiaohong Xu(许小红)^1,‡

1 Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education, and Research Institute of Materials Science, Shanxi Normal University, Taiyuan 030006, China;
2 College of Physics and Electronic Information, Shanxi Normal University, Taiyuan 030006, China

收稿日期:2023-06-30 修回日期:2023-10-20 接受日期:2023-10-26 出版日期:2023-12-13 发布日期:2023-12-29
通讯作者: Huisheng Zhang, Xiaohong Xu E-mail:hszhang@sxnu.edu.cn;xuxh@sxnu.edu.cn

Recent progress on valley polarization and valley-polarized topological states in two-dimensional materials

Fei Wang(王斐)¹, Yaling Zhang(张亚玲)¹, Wenjia Yang(杨文佳)¹, Huisheng Zhang(张会生)^1,2,†, and Xiaohong Xu(许小红)^1,‡

1 Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education, and Research Institute of Materials Science, Shanxi Normal University, Taiyuan 030006, China;
2 College of Physics and Electronic Information, Shanxi Normal University, Taiyuan 030006, China

Received:2023-06-30 Revised:2023-10-20 Accepted:2023-10-26 Online:2023-12-13 Published:2023-12-29
Contact: Huisheng Zhang, Xiaohong Xu E-mail:hszhang@sxnu.edu.cn;xuxh@sxnu.edu.cn

摘要/Abstract

摘要： Valleytronics, using valley degree of freedom to encode, process, and store information, may find practical applications in low-power-consumption devices. Recent theoretical and experimental studies have demonstrated that two-dimensional (2D) honeycomb lattice systems with inversion symmetry breaking, such as transition-metal dichalcogenides (TMDs), are ideal candidates for realizing valley polarization. In addition to the optical field, lifting the valley degeneracy of TMDs by introducing magnetism is an efficient way to manipulate the valley degree of freedom. In this paper, we first review the recent progress on valley polarization in various TMD-based systems, including magnetically doped TMDs, intrinsic TMDs with both inversion and time-reversal symmetry broken, and magnetic TMD heterostructures. When topologically nontrivial bands are empowered into valley-polarized systems, valley-polarized topological states, namely valley-polarized quantum anomalous Hall effect can be realized. Therefore, we have also reviewed the theoretical proposals for realizing valley-polarized topological states in 2D honeycomb lattices. Our paper can help readers quickly grasp the latest research developments in this field.

关键词: valley polarization, valley-polarized topological states, two-dimensional material

Abstract: Valleytronics, using valley degree of freedom to encode, process, and store information, may find practical applications in low-power-consumption devices. Recent theoretical and experimental studies have demonstrated that two-dimensional (2D) honeycomb lattice systems with inversion symmetry breaking, such as transition-metal dichalcogenides (TMDs), are ideal candidates for realizing valley polarization. In addition to the optical field, lifting the valley degeneracy of TMDs by introducing magnetism is an efficient way to manipulate the valley degree of freedom. In this paper, we first review the recent progress on valley polarization in various TMD-based systems, including magnetically doped TMDs, intrinsic TMDs with both inversion and time-reversal symmetry broken, and magnetic TMD heterostructures. When topologically nontrivial bands are empowered into valley-polarized systems, valley-polarized topological states, namely valley-polarized quantum anomalous Hall effect can be realized. Therefore, we have also reviewed the theoretical proposals for realizing valley-polarized topological states in 2D honeycomb lattices. Our paper can help readers quickly grasp the latest research developments in this field.

Key words: valley polarization, valley-polarized topological states, two-dimensional material

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

71.15.Mb (Density functional theory, local density approximation, gradient and other corrections) 71.20.-b (Electron density of states and band structure of crystalline solids) 73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

Fei Wang(王斐), Yaling Zhang(张亚玲), Wenjia Yang(杨文佳), Huisheng Zhang(张会生), and Xiaohong Xu(许小红). Recent progress on valley polarization and valley-polarized topological states in two-dimensional materials[J]. 中国物理B, 2024, 33(1): 17306-17306.

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Recent progress on valley polarization and valley-polarized topological states in two-dimensional materials

Recent progress on valley polarization and valley-polarized topological states in two-dimensional materials

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