中国物理B ›› 2023, Vol. 32 ›› Issue (5): 56102-056102.doi: 10.1088/1674-1056/acb41c

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Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor

Guang-Sheng Ning(宁广胜)1, Li-Min Zhang(张利民)2,†, Wei-Hua Zhong(钟巍华)1,‡, Sheng-Hong Wang(王绳鸿)2, Xin-Yu Liu(刘心语)3, Ding-Ping Wang(汪定平)2, An-Ping He(何安平)3, Jian Liu(刘健)1, and Chang-Yi Zhang(张长义)1   

  1. 1 Reactor Engineering Technology Research Institute, China Institute of Atomic Energy, Beijing 102413, China;
    2 School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;
    3 School of Information Science and Engineering, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2022-12-05 修回日期:2023-01-13 接受日期:2023-01-18 出版日期:2023-04-21 发布日期:2023-04-21
  • 通讯作者: Li-Min Zhang, Wei-Hua Zhong E-mail:zhanglm@lzu.edu.cn;zhongwh@ciae.ac.cn

Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor

Guang-Sheng Ning(宁广胜)1, Li-Min Zhang(张利民)2,†, Wei-Hua Zhong(钟巍华)1,‡, Sheng-Hong Wang(王绳鸿)2, Xin-Yu Liu(刘心语)3, Ding-Ping Wang(汪定平)2, An-Ping He(何安平)3, Jian Liu(刘健)1, and Chang-Yi Zhang(张长义)1   

  1. 1 Reactor Engineering Technology Research Institute, China Institute of Atomic Energy, Beijing 102413, China;
    2 School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;
    3 School of Information Science and Engineering, Lanzhou University, Lanzhou 730000, China
  • Received:2022-12-05 Revised:2023-01-13 Accepted:2023-01-18 Online:2023-04-21 Published:2023-04-21
  • Contact: Li-Min Zhang, Wei-Hua Zhong E-mail:zhanglm@lzu.edu.cn;zhongwh@ciae.ac.cn

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摘要： High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor. The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2×1020 n/cm2. The isochronal and isothermal annealing behaviors of the irradiated SiC were investigated by x-ray diffraction and four-point probe techniques. Invisible point defects and defect clusters are found to be the dominating defect types in the neutron-irradiated SiC. The amount of defect recovery in SiC reaches a maximum value after isothermal annealing for 30 min. Based on the annealing temperature dependences of both lattice swelling and material resistivity, the irradiation temperature of the SiC monitors is determined to be ～ 410 ℃, which is much higher than the thermocouple temperature of 275 ℃ recorded during neutron irradiation. The possible reasons for the difference are carefully discussed.

关键词: silicon carbide, irradiation temperature monitor, research reactor

Abstract: High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor. The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2×1020 n/cm2. The isochronal and isothermal annealing behaviors of the irradiated SiC were investigated by x-ray diffraction and four-point probe techniques. Invisible point defects and defect clusters are found to be the dominating defect types in the neutron-irradiated SiC. The amount of defect recovery in SiC reaches a maximum value after isothermal annealing for 30 min. Based on the annealing temperature dependences of both lattice swelling and material resistivity, the irradiation temperature of the SiC monitors is determined to be ～ 410 ℃, which is much higher than the thermocouple temperature of 275 ℃ recorded during neutron irradiation. The possible reasons for the difference are carefully discussed.

Key words: silicon carbide, irradiation temperature monitor, research reactor

中图分类号:  (Neutron radiation effects)

  • 61.80.Hg
28.52.Lf (Components and instrumentation) 28.50.Dr (Research reactors)