Graphene-based heterojunction for enhanced photodetectors

doi:10.1088/1674-1056/ac1b8b

中国物理B ›› 2022, Vol. 31 ›› Issue (3): 38501-038501.doi: 10.1088/1674-1056/ac1b8b

Graphene-based heterojunction for enhanced photodetectors

Haiting Yao(姚海婷)¹, Xin Guo(郭鑫)^1,†, Aida Bao(鲍爱达)¹, Haiyang Mao(毛海央)², Youchun Ma(马游春)¹, and Xuechao Li(李学超)¹

1 National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China;
2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2021-06-16 修回日期:2021-07-26 接受日期:2021-08-07 出版日期:2022-02-22 发布日期:2022-02-24
通讯作者: Xin Guo E-mail:guoxin2019@nuc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61771467), Shanxi Scholarship Council of China (Grant No. 2020-112), Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi, China (Grant Nos. 2020L0268 and 2020L0307), and Science Foundation of North University of China (Grant No. XJJ201915).

Graphene-based heterojunction for enhanced photodetectors

Haiting Yao(姚海婷)¹, Xin Guo(郭鑫)^1,†, Aida Bao(鲍爱达)¹, Haiyang Mao(毛海央)², Youchun Ma(马游春)¹, and Xuechao Li(李学超)¹

1 National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China;
2 Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

Received:2021-06-16 Revised:2021-07-26 Accepted:2021-08-07 Online:2022-02-22 Published:2022-02-24
Contact: Xin Guo E-mail:guoxin2019@nuc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61771467), Shanxi Scholarship Council of China (Grant No. 2020-112), Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi, China (Grant Nos. 2020L0268 and 2020L0307), and Science Foundation of North University of China (Grant No. XJJ201915).

摘要/Abstract

摘要： Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on—off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.

关键词: graphene-based heterojunction photodetector, photocurrent generation mechanism, classification of graphene-based heterojunction, graphene—transition metal dichalcogenide (TMD) heterojunction

Abstract: Graphene has high light transmittance of 97.7% and ultrafast carrier mobility, which means it has attracted widespread attention in two-dimensional materials. However, the optical absorptivity of single-layer graphene is only 2.3%, and the corresponding photoresponsivity is difficult to produce at normal light irradiation. And the low on—off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices, hindering potential development. The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties, which can mutually modify the defects of both the graphene and material making it then suitable for optoelectronic devices. In this review, the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed. Firstly, we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector, especially photovoltaic, photoconduction and photogating effects. Secondly, the classification of graphene-based heterojunctions in different directions is summarized. Meanwhile, the latest research progress of graphene-transition metal dichalcogenide (TMD) heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced. Finally, the difficulties faced by the existing technologies of graphene-based photodetectors are discussed, and further prospects are proposed.

Key words: graphene-based heterojunction photodetector, photocurrent generation mechanism, classification of graphene-based heterojunction, graphene—transition metal dichalcogenide (TMD) heterojunction

中图分类号: (Optoelectronic device characterization, design, and modeling)

85.60.Bt

85.60.Gz (Photodetectors (including infrared and CCD detectors)) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 74.25.Gz (Optical properties)

Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Graphene-based heterojunction for enhanced photodetectors[J]. 中国物理B, 2022, 31(3): 38501-038501.

Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Graphene-based heterojunction for enhanced photodetectors[J]. Chin. Phys. B, 2022, 31(3): 38501-038501.

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