中国物理B ›› 2021, Vol. 30 ›› Issue (1): 17701-.doi: 10.1088/1674-1056/abcf32

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  • 收稿日期:2020-05-07 修回日期:2020-10-07 接受日期:2020-12-01 出版日期:2020-12-17 发布日期:2020-12-30

Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica

Xibo Yin(尹锡波)1, Yifan Shen(沈逸凡)2, Chaofan Xu(徐超凡)1, Jing He(贺靖)1, Junye Li(李俊烨)1, Haining Ji(姬海宁)1, Jianwei Wang(王建伟)1, Handong Li(李含冬)1,†, Xiaohong Zhu(朱小红)2, Xiaobin Niu(牛晓滨)1,‡, and Zhiming Wang(王志明)3   

  1. 1 School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China; 2 College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China; 3 Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2020-05-07 Revised:2020-10-07 Accepted:2020-12-01 Online:2020-12-17 Published:2020-12-30
  • Contact: †Corresponding author. E-mail: hdli@uestc.edu.cn ‡Corresponding author. E-mail: xbniu@uestc.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant Nos. 2018YFA0306102 and 2018YFA0306703), the National Natural Science Foundation of China (Grant No. 61474014), the Sichuan Science and Technology Program, China (Grant No.2019YJ0202), and the University Program for Elaborate Courses of Postgraduates.

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Abstract: The growth of γ -In2Se3 thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ -In2Se3 is achieved at a relatively low growth temperature. An ultrathin β -In2Se3 buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystalline γ -In2Se3 at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ -In2Se3 thin films.

Key words: γ -In2Se3, molecular beam epitaxy, optoelectronic response

中图分类号:  (Epitaxial and superlattice films)

  • 77.55.Px
78.55.-m (Photoluminescence, properties and materials) 85.60.Bt (Optoelectronic device characterization, design, and modeling)