Achieving high-performance multilayer MoSe2 photodetectors by defect engineering

doi:10.1088/1674-1056/abea8b

中国物理B ›› 2021, Vol. 30 ›› Issue (8): 87801-087801.doi: 10.1088/1674-1056/abea8b

Achieving high-performance multilayer MoSe₂ photodetectors by defect engineering

Jintao Hong(洪锦涛)¹, Fengyuan Zhang(张丰源)¹, Zheng Liu(刘峥)², Jie Jiang(蒋杰)³, Zhangting Wu(吴章婷)^1,†, Peng Zheng(郑鹏)¹, Hui Zheng(郑辉)¹, Liang Zheng(郑梁)¹, Dexuan Huo(霍德璇)⁴, Zhenhua Ni(倪振华)³, and Yang Zhang(张阳)^1,‡

1 Laboratory for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China;
2 Jiangsu Province Special Equipment Safety Supervision and Inspection Institute, Wuxi 214170, China;
3 School of Physics, Southeast University, Nanjing 211189, China;
4 Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China

收稿日期:2020-12-14 修回日期:2021-02-03 接受日期:2021-03-01 出版日期:2021-07-16 发布日期:2021-07-16
通讯作者: Zhangting Wu, Yang Zhang E-mail:wuzhangting@hdu.edu.cn;yzhang09@hdu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61904043) and the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ19A040009).

Achieving high-performance multilayer MoSe₂ photodetectors by defect engineering

1 Laboratory for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, China;
2 Jiangsu Province Special Equipment Safety Supervision and Inspection Institute, Wuxi 214170, China;
3 School of Physics, Southeast University, Nanjing 211189, China;
4 Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China

Received:2020-12-14 Revised:2021-02-03 Accepted:2021-03-01 Online:2021-07-16 Published:2021-07-16
Contact: Zhangting Wu, Yang Zhang E-mail:wuzhangting@hdu.edu.cn;yzhang09@hdu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61904043) and the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ19A040009).

1. 2021-087801-SI.pdf(261KB)

摘要/Abstract

摘要： Optoelectronic properties of MoSe₂ are modulated by controlled annealing in air. Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects. Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport. Furthermore, the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing. The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance. Furthermore, the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3×10⁴ A/W.

关键词: MoSe₂, oxygen defects, electrical properties, optoelectronic properties

Abstract: Optoelectronic properties of MoSe₂ are modulated by controlled annealing in air. Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects. Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport. Furthermore, the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing. The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance. Furthermore, the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3×10⁴ A/W.

Key words: MoSe₂, oxygen defects, electrical properties, optoelectronic properties

中图分类号: (Infrared and Raman spectra)

78.30.-j

85.30.Tv (Field effect devices) 85.60.Bt (Optoelectronic device characterization, design, and modeling) 85.60.Dw (Photodiodes; phototransistors; photoresistors)

Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳). Achieving high-performance multilayer MoSe₂ photodetectors by defect engineering[J]. 中国物理B, 2021, 30(8): 87801-087801.

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Achieving high-performance multilayer MoSe₂ photodetectors by defect engineering

Achieving high-performance multilayer MoSe₂ photodetectors by defect engineering

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