中国物理B ›› 2021, Vol. 30 ›› Issue (11): 117303-117303.doi: 10.1088/1674-1056/abff44
Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template
Qun-Si Yang(羊群思)1,2, Qing Liu(刘清)1,2, Dong Zhou(周东)1,2, Wei-Zong Xu(徐尉宗)1,2, Yi-Wang Wang(王宜望)1,2, Fang-Fang Ren(任芳芳)1,2, and Hai Lu(陆海)1,2,†
- 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;
2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template
Qun-Si Yang(羊群思)1,2, Qing Liu(刘清)1,2, Dong Zhou(周东)1,2, Wei-Zong Xu(徐尉宗)1,2, Yi-Wang Wang(王宜望)1,2, Fang-Fang Ren(任芳芳)1,2, and Hai Lu(陆海)1,2,†
- 1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China;
2 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
摘要： Alpha particle radiation detectors with planar double Schottky contacts (DSC) are directly fabricated on 5-μm-thick epitaxial semi-insulating (SI) GaN:Fe film with resistivity higher than 1×108Ω·cm. Under 10 V bias, the detector exhibits a low dark current of less than 5.0×10-11 A at room-temperature, which increases at higher temperatures. Linear behavior in the semi-log reverse current-voltage plot suggests that Poole-Frenkel emission is the dominant carrier leakage mechanism at high bias. Distinct double-peak characteristics are observed in the energy spectrum of alpha particles regardless of bias voltage. The energy resolution of the SI-GaN based detector is determined to be ～ 8.6% at the deposited energy of 1.209 MeV with a charge collection efficiency of ～ 81.7%. At a higher temperature of 90 ℃, the measured full width at half maximum (FWHM) rises to 235 keV with no shift of energy peak position, which proves that the GaN detector has potential to work stably in high temperature environment. This study provides a possible route to fabricate the low cost GaN-based alpha particle detector with reasonable performance.
中图分类号: (Metal-semiconductor-metal structures)
- 73.40.Sx