中国物理B ›› 2021, Vol. 30 ›› Issue (1): 17901-.doi: 10.1088/1674-1056/abc2be

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  • 收稿日期:2020-07-22 修回日期:2020-09-04 接受日期:2020-10-20 出版日期:2020-12-17 发布日期:2021-01-13

Analysis of secondary electron emission using the fractal method

Chun-Jiang Bai(白春江)1, Tian-Cun Hu(胡天存)1, Yun He(何鋆)1, Guang-Hui Miao(苗光辉)1, Rui Wang(王瑞)1, Na Zhang(张娜)1, and Wan-Zhao Cui(崔万照)1,†   

  1. National Key Laboratory of Science and Technology on Space Science, China Academy of Space Technology (Xi'an), Xi'an 710100, China
  • Received:2020-07-22 Revised:2020-09-04 Accepted:2020-10-20 Online:2020-12-17 Published:2021-01-13
  • Contact: Corresponding author. E-mail: cuiwanzhao@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. U1537211 and 61901361).

Abstract: Based on the rough surface topography with fractal parameters and the Monte-Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield (SEY) of a metal with rough surface topography. The results show that when the characteristic length scale of the surface, G, is larger than 1× 10-7, the surface roughness increases with the increasing fractal dimension D. When the surface roughness becomes larger, it is difficult for entered electrons to escape surface. As a result, more electrons are collected and then SEY decreases. When G is less than 1× 10-7, the effect of the surface topography can be ignored, and the SEY almost has no change as the dimension D increases. Then, the multipactor thresholds of a C-band rectangular impedance transfer and an ultrahigh-frequency-band coaxial impedance transfer are predicted by the relationship between the SEY and the fractal parameters. It is verified that for practical microwave devices, the larger the parameter G is, the higher the multipactor threshold is. Also, the larger the value of D, the higher the multipactor threshold.

Key words: secondary electron emission yield, the fractal method, multipactor

中图分类号:  (Electron impact: secondary emission)

  • 79.20.Hx
05.45.Df (Fractals) 52.80.Pi (High-frequency and RF discharges)