Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source

doi:10.1088/1674-1056/ab5efb

中国物理B ›› 2020, Vol. 29 ›› Issue (1): 14210-014210.doi: 10.1088/1674-1056/ab5efb

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source

1 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2019-07-07 修回日期:2019-10-23 出版日期:2020-01-05 发布日期:2020-01-05
通讯作者: Zu-Jun Wang E-mail:wangzujun@nint.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, and 11690043), the Chinese Academy of Sciences Strategic Pilot Science and Technology Project (Grant No. XDA15015000), the Innovation Foundation of Radiation Application, China (Grant No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1803 and 1903Z).

Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source

Rui Xu(徐瑞)¹, Zu-Jun Wang(王祖军)², Yuan-Yuan Xue(薛院院)², Hao Ning(宁浩)¹, Min-Bo Liu(刘敏波)², Xiao-Qiang Guo(郭晓强)², Zhi-Bin Yao(姚志斌)², Jiang-Kun Sheng(盛江坤)², Wu-Ying Ma(马武英)², Guan-Tao Dong(董观涛)²

1 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2019-07-07 Revised:2019-10-23 Online:2020-01-05 Published:2020-01-05
Contact: Zu-Jun Wang E-mail:wangzujun@nint.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, and 11690043), the Chinese Academy of Sciences Strategic Pilot Science and Technology Project (Grant No. XDA15015000), the Innovation Foundation of Radiation Application, China (Grant No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1803 and 1903Z).

摘要/Abstract

摘要： Neutron radiation experiments of optocouplers at back-streaming white neutrons (back-n) in China Spallation Neutron Source (CSNS) are presented. The displacement damages induced by neutron radiation are analyzed. The performance degradations of two types of optocouplers are compared. The degradations of current transfer ratio (CTR) are analyzed, and the mechanisms induced by radiation are also demonstrated. With the increase of the accumulated fluence, the CTR is degrading linearly with neutron fluence. The radiation hardening of optocouplers can be improved when the forward current is increased. Other parameters related to CTR degradation of optocouplers are also analyzed.

关键词: China Spallation Neutron Source, optocoupler, neutron radiation, displacement damage, current transfer ratio

Abstract: Neutron radiation experiments of optocouplers at back-streaming white neutrons (back-n) in China Spallation Neutron Source (CSNS) are presented. The displacement damages induced by neutron radiation are analyzed. The performance degradations of two types of optocouplers are compared. The degradations of current transfer ratio (CTR) are analyzed, and the mechanisms induced by radiation are also demonstrated. With the increase of the accumulated fluence, the CTR is degrading linearly with neutron fluence. The radiation hardening of optocouplers can be improved when the forward current is increased. Other parameters related to CTR degradation of optocouplers are also analyzed.

Key words: China Spallation Neutron Source, optocoupler, neutron radiation, displacement damage, current transfer ratio

中图分类号: (Environmental and radiation effects on optical elements, devices, and systems)

42.88.+h

61.80.Hg (Neutron radiation effects) 52.59.-f (Intense particle beams and radiation sources) 61.80.-x (Physical radiation effects, radiation damage)

徐瑞, 王祖军, 薛院院, 宁浩, 刘敏波, 郭晓强, 姚志斌, 盛江坤, 马武英, 董观涛. Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source[J]. 中国物理B, 2020, 29(1): 14210-014210.

Rui Xu(徐瑞), Zu-Jun Wang(王祖军), Yuan-Yuan Xue(薛院院), Hao Ning(宁浩), Min-Bo Liu(刘敏波), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), Guan-Tao Dong(董观涛). Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source[J]. Chin. Phys. B, 2020, 29(1): 14210-014210.

参考文献 10

[1]	Rax B G, Lee C I, Johnston A H and Barnes C E 1996 IEEE Trans. Nucl. Sci. 43 3167 doi: 10.1109/23.556921
[2]	Johnston A H and Rax B G 2000 IEEE Trans. Nucl. Sci. 47 675 doi: 10.1109/23.856497
[3]	Gerelick J L and Ladbury R 2004 IEEE Trans. Nucl. Sci. 51 3730 doi: 10.1109/TNS.2004.839249
[4]	Johnston A H, Harries R D and Miyahira T F 2009 IEEE Trans. Nucl. Sci. 56 3310 doi: 10.1109/TNS.2009.2033685
[5]	Irom F, Edmonds L D, Allen G R and Rax B G 2018 IEEE Trans. Nucl. Sci. 65 1553 doi: 10.1109/TNS.2018.2819960
[6]	Miyahira T F and Johnston A H 2002 IEEE Trans. Nucl. Sci. 49 2868 doi: 10.1109/TNS.2002.805350
[7]	Wang Z J, Xue Y Y, Chen W, Ning H, Xu R, Guo X Q, Sheng J K, Yao Z B, He B P, Ma W Y and Dong G T 2019 Nucl. Instrum. Methods A 920 68 doi: 10.1016/j.nima.2018.12.033
[8]	Tan Z X, Tang J Y, Jing H T, Fan R R, Li Q, Ning C J, Bao J, Ruan X C, Luan G Y, Feng C Q and Zhang X P 2018 Nucl. Instrum. Methods A 889 122 doi: 10.1016/j.nima.2018.01.099
[9]	Jin X M, Liu Y, Su C L, Chen W, Wang C H, Yang S C and Guo X Q 2019 Nucl. Sci. Tech. 30 143 doi: 10.1007/s41365-019-0664-5
[10]	Johnston A H and Miyahira T F 2000 IEEE Trans. Nucl. Sci. 47 2500 doi: 10.1109/23.903799

[1]	Xin-Xiang Li(李鑫祥), Long-Xiang Liu(刘龙祥), Wei Jiang(蒋伟), Jie Ren(任杰), Hong-Wei Wang(王宏伟), Gong-Tao Fan(范功涛), Jian-Jun He(何建军), Xi-Guang Cao(曹喜光), Long-Long Song(宋龙龙),Yue Zhang(张岳), Xin-Rong Hu(胡新荣), Zi-Rui Hao(郝子锐), Pan Kuang(匡攀), Bing Jiang(姜炳),Xiao-He Wang(王小鹤), Ji-Feng Hu(胡继峰), Jin-Cheng Wang(王金成), De-Xin Wang(王德鑫),Su-Yalatu Zhang(张苏雅拉吐), Ying-Du Liu(刘应都), Xu Ma(麻旭), Chun-Wang Ma(马春旺),Yu-Ting Wang(王玉廷), Zhen-Dong An(安振东), Jun Su(苏俊), Li-Yong Zhang(张立勇),Yu-Xuan Yang(杨宇萱), Wen-Bo Liu(刘文博), Wan-Qing Su(苏琬晴),Sheng Jin(金晟), and Kai-Jie Chen(陈开杰). Measurements of the ¹⁰⁷Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility[J]. 中国物理B, 2022, 31(3): 38204-038204.
[2]	Jie Chen(陈洁), Zhijian Tan(谭志坚), Weiqiang Liu(刘玮强), Sihao Deng(邓司浩), Shengxiang Wang(王声翔), Liyi Wang(王立毅), Haibiao Zheng(郑海彪), Huaile Lu(卢怀乐), Feiran Shen(沈斐然), Jiazheng Hao(郝嘉政), Xiaojuan Zhou(周晓娟), Jianrong Zhou(周健荣), Zhijia Sun(孙志嘉), Lunhua He(何伦华), and Tianjiao Liang(梁天骄). First neutron Bragg-edge imaging experimental results at CSNS[J]. 中国物理B, 2021, 30(9): 96106-096106.
[3]	刘岩, 陈伟, 贺朝会, 苏春垒, 王晨辉, 金晓明, 李俊霖, 薛院院. Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons[J]. 中国物理B, 2019, 28(6): 67302-067302.
[4]	潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利. Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation[J]. 中国物理B, 2018, 27(3): 38501-038501.
[5]	潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利, 魏佳男, 赵雯. Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM[J]. 中国物理B, 2017, 26(1): 18501-018501.
[6]	孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘. Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation[J]. 中国物理B, 2014, 23(11): 116104-116104.
[7]	刘超铭, 李兴冀, 耿洪滨, 杨德庄, 何世禹 . Effect of bias condition on heavy ion radiation in bipolar junction transistor[J]. 中国物理B, 2012, 21(8): 80703-080703.
[8]	刘超铭, 李兴冀, 耿洪滨, 芮二明, 郭立新, 杨剑群. Incident particle range dependence of radiation damage in a power bipolar junction transistor[J]. 中国物理B, 2012, 21(10): 104211-104211.
[9]	李兴冀, 耿洪滨, 兰慕杰, 杨德庄, 何世禹, 刘超铭. Degradation mechanisms of current gain in NPN transistors[J]. 中国物理B, 2010, 19(6): 66103-066103.
[10]	李兴冀, 耿洪滨, 兰慕杰, 杨德庄, 何世禹, 刘超铭. Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons[J]. 中国物理B, 2010, 19(5): 56103-056103.
[11]	薛守斌, 黄如, 黄德涛, 王思浩, 谭斐, 王健, 安霞, 张兴. Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation[J]. 中国物理B, 2010, 19(11): 117307-117307.
[12]	高欣, 杨生胜, 薛玉雄, 李凯, 李丹明, 王鹢, 王云飞, 冯展祖. Effects of electron radiation on shielded space and triple-junction GaAs solar cells[J]. 中国物理B, 2009, 18(11): 5015-5019.

Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source

Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 10

相关文章 12

Metrics

本文评价

推荐阅读 0