中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67403-067403.doi: 10.1088/1674-1056/27/6/067403
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Zhao-Hong Mo(莫钊洪), Chao Lu(路超), Yi Liu(刘毅), Wei Feng(冯卫), Yun Zhang(张云), Wen Zhang(张文), Shi-Yong Tan(谭世勇), Hong-Jun Zhang(张宏俊), Chun-Yu Guo(郭春煜), Xiao-Dong Wang(汪小冬), Liang Wang(王亮), Rui-Zhu Yang(杨蕊竹), Zhong-Guo Ren(任忠国), Xie-Gang Zhu(朱燮刚), Zhong-Hua Xiong(熊忠华), Qi An(安琪), Xin-Chun Lai(赖新春)
Zhao-Hong Mo(莫钊洪)1,2, Chao Lu(路超)1, Yi Liu(刘毅)1, Wei Feng(冯卫)1, Yun Zhang(张云)1, Wen Zhang(张文)1, Shi-Yong Tan(谭世勇)1, Hong-Jun Zhang(张宏俊)1, Chun-Yu Guo(郭春煜)3, Xiao-Dong Wang(汪小冬)1, Liang Wang(王亮)1, Rui-Zhu Yang(杨蕊竹)1, Zhong-Guo Ren(任忠国)1, Xie-Gang Zhu(朱燮刚)1, Zhong-Hua Xiong(熊忠华)1, Qi An(安琪)2, Xin-Chun Lai(赖新春)4
摘要: Bilayer superconducting films with tunable transition temperature (Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium (Ti/In) bilayer superconducting films are successfully fabricated on SiO2/Si (001) substrates by molecular beam epitaxy (MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to -150℃ during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 mK to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases.
中图分类号: (Superconducting films and low-dimensional structures)