中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47209-047209.doi: 10.1088/1674-1056/27/4/047209
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Ling Sun(孙令), Lu Wang(王禄), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Jun Fang(方俊), Li-Li Xie(谢莉莉), Zhi-Biao Hao(郝智彪), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Hong Chen(陈弘)
Ling Sun(孙令)1,2, Lu Wang(王禄)1, Jin-Lei Lu(鲁金蕾)1,2, Jie Liu(刘洁)1,2, Jun Fang(方俊)1,2, Li-Li Xie(谢莉莉)3, Zhi-Biao Hao(郝智彪)3, Hai-Qiang Jia(贾海强)1, Wen-Xin Wang(王文新)1, Hong Chen(陈弘)1
摘要:
Here in this paper, we report a room-temperature operating infrared photodetector based on the interband transition of an InAsSb/GaSb quantum well. The interband transition energy of 5-nm thick InAs0.91Sb0.09 embedded in the GaSb barrier is calculated to be 0.53 eV (2.35 μm), which makes the absorption range of InAsSb cover an entire range from short-wavelength infrared to long-wavelength infrared spectrum. The fabricated photodetector exhibits a narrow response range from 2.0 μm to 2.3 μm with a peak around 2.1 μm at 300 K. The peak responsivity is 0.4 A/W under -500 -mV applied bias voltage, corresponding to a peak quantum efficiency of 23.8% in the case without any anti-reflection coating. At 300 K, the photodetector exhibits a dark current density of 6.05×10-3 A/cm2 under -400-mV applied bias voltage and 3.25×10-5 A/cm2 under zero, separately. The peak detectivity is 6.91×1010 cm·Hz1/2/W under zero bias voltage at 300 K.
中图分类号: (III-V and II-VI semiconductors)