中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88101-088101.doi: 10.1088/1674-1056/26/8/088101
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Wang Zhang(张望), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Qi-Feng Lv(吕奇峰), Xiang-Hai Ji(季祥海), Tao Yang(杨涛), Fu-Hua Yang(杨富华)
Wang Zhang(张望)1,2, Wei-Hua Han(韩伟华)1,2, Xiao-Song Zhao(赵晓松)1,2, Qi-Feng Lv(吕奇峰)1,2, Xiang-Hai Ji(季祥海)4, Tao Yang(杨涛)4, Fu-Hua Yang(杨富华)1,2,3
摘要:
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate. Hexagonal InAs nanowires are uniformly grown between face-to-face (111) vertical sidewalls of neighboring Si fingers by metal-organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers, namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×105 are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.
中图分类号: (III-V semiconductors)