Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

doi:10.1088/1674-1056/26/7/077101

中国物理B ›› 2017, Vol. 26 ›› Issue (7): 77101-077101.doi: 10.1088/1674-1056/26/7/077101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
4 Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

收稿日期:2017-03-05 修回日期:2017-04-07 出版日期:2017-07-05 发布日期:2017-07-05
通讯作者: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant Nos.2016YFB0401801 and 2016YFB0400803),the National Natural Science Foundation of China (Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089),Science Challenge Project,China (Grant No.JCKY2016212A503),and Beijing Municipal Science and Technology Project,China (Grant No.Z161100002116037).

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Jing Yang(杨静)¹, De-Gang Zhao(赵德刚)^1,2, De-Sheng Jiang(江德生)¹, Ping Chen(陈平)¹, Zong-Shun Liu(刘宗顺)¹, Jian-Jun Zhu(朱建军)¹, Xiang Li(李翔)¹, Wei Liu(刘炜)¹, Feng Liang(梁锋)¹, Li-Qun Zhang(张立群)³, Hui Yang(杨辉)^1,3, Wen-Jie Wang(王文杰)⁴, Mo Li(李沫)⁴

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
4 Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China

Received:2017-03-05 Revised:2017-04-07 Online:2017-07-05 Published:2017-07-05
Contact: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant Nos.2016YFB0401801 and 2016YFB0400803),the National Natural Science Foundation of China (Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089),Science Challenge Project,China (Grant No.JCKY2016212A503),and Beijing Municipal Science and Technology Project,China (Grant No.Z161100002116037).

摘要/Abstract

摘要：

Physical implications of the activation energy derived from temperature dependent photoluminescence (PL) of InGaN-based materials are investigated, finding that the activation energy is determined by the thermal decay processes involved. If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in InGaN materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.

关键词: nitride materials, temperature dependent photoluminescence, activation energy

Abstract:

Key words: nitride materials, temperature dependent photoluminescence, activation energy

中图分类号: (Semiconductor compounds)

71.20.Nr

71.55.Eq (III-V semiconductors) 73.21.Fg (Quantum wells)

杨静, 赵德刚, 江德生, 陈平, 刘宗顺, 朱建军, 李翔, 刘炜, 梁锋, 张立群, 杨辉, 王文杰, 李沫. Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials[J]. 中国物理B, 2017, 26(7): 77101-077101.

Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Xiang Li(李翔), Wei Liu(刘炜), Feng Liang(梁锋), Li-Qun Zhang(张立群), Hui Yang(杨辉), Wen-Jie Wang(王文杰), Mo Li(李沫). Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials[J]. Chin. Phys. B, 2017, 26(7): 77101-077101.

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Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

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