中国物理B ›› 2013, Vol. 22 ›› Issue (9): 96202-096202.doi: 10.1088/1674-1056/22/9/096202

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

In situ electrical resistance and activation energy of solid C60 under high pressure

杨洁a b, 刘才龙b c, 高春晓b   

  1. a Fundamental Department, Aviation University of Airforce, Changchun 130022, China;
    b State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China;
    c College of Geoexploration Science and Technology, Jilin University, Changchun 130026, China
  • 收稿日期:2013-02-16 修回日期:2013-05-13 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB808204), the National Natural Science Foundation of China (Grant Nos. 11074094 and 91014004), and the Fundamental Research Funds for Jilin University, China (Grant No. 450060491500).

In situ electrical resistance and activation energy of solid C60 under high pressure

Yang Jie (杨洁)a b, Liu Cai-Long (刘才龙)b c, Gao Chun-Xiao (高春晓)b   

  1. a Fundamental Department, Aviation University of Airforce, Changchun 130022, China;
    b State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China;
    c College of Geoexploration Science and Technology, Jilin University, Changchun 130026, China
  • Received:2013-02-16 Revised:2013-05-13 Online:2013-07-26 Published:2013-07-26
  • Contact: Liu Cai-Long E-mail:cailong_liu@jlu.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB808204), the National Natural Science Foundation of China (Grant Nos. 11074094 and 91014004), and the Fundamental Research Funds for Jilin University, China (Grant No. 450060491500).

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摘要： The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0.49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.

关键词: high pressure, electrical resistance, activation energy, C60 fullerene

Abstract: The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0.49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.

Key words: high pressure, electrical resistance, activation energy, C60 fullerene

中图分类号:  (High-pressure effects in solids and liquids)

  • 62.50.-p
71.55.-i (Impurity and defect levels) 71.20.Tx (Fullerenes and related materials; intercalation compounds)