Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

doi:10.1088/1674-1056/23/2/028503

中国物理B ›› 2014, Vol. 23 ›› Issue (2): 28503-028503.doi: 10.1088/1674-1056/23/2/028503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

李晓静^a, 赵德刚^a, 江德生^a, 刘宗顺^a, 陈平^a, 吴亮亮^a, 李亮^a, 乐伶聪^a, 杨静^a, 何晓光^a, 王辉^b, 朱建军^b, 张书明^b, 张宝顺^b, 杨辉^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2013-03-20 修回日期:2013-05-03 出版日期:2013-12-12 发布日期:2013-12-12
基金资助:
Project supported by the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-discipline Foundation.

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

Li Xiao-Jing (李晓静)^a, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Liu Zong-Shun (刘宗顺)^a, Chen Ping (陈平)^a, Wu Liang-Liang (吴亮亮)^a, Li Liang (李亮)^a, Le Ling-Cong (乐伶聪)^a, Yang Jing (杨静)^a, He Xiao-Guang (何晓光)^a, Wang Hui (王辉)^b, Zhu Jian-Jun (朱建军)^b, Zhang Shu-Ming (张书明)^b, Zhang Bao-Shun (张宝顺)^b, Yang Hui (杨辉)^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2013-03-20 Revised:2013-05-03 Online:2013-12-12 Published:2013-12-12
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
About author:85.60.Gz; 77.22.Ej; 74.72.Gh
Supported by:
Project supported by the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-discipline Foundation.

摘要/Abstract

摘要： The influences of polarization and p-region doping concentration on the photocurrent response of Al_0.4Ga_0.6N/Al_0.4Ga_0.6N/Al_0.65Ga_0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages. The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect, but increases rapidly with the increase of effective doping concentration in p-type region. These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field. A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.

关键词: nitride materials, photodetector, polarization

Abstract: The influences of polarization and p-region doping concentration on the photocurrent response of Al_0.4Ga_0.6N/Al_0.4Ga_0.6N/Al_0.65Ga_0.35N p–i–n avalanche photodetector are studied in a wide range of reverse bias voltages. The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect, but increases rapidly with the increase of effective doping concentration in p-type region. These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field. A high p-region doping concentration in the p–i–n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.

Key words: nitride materials, photodetector, polarization

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

77.22.Ej (Polarization and depolarization) 74.72.Gh (Hole-doped)

李晓静, 赵德刚, 江德生, 刘宗顺, 陈平, 吴亮亮, 李亮, 乐伶聪, 杨静, 何晓光, 王辉, 朱建军, 张书明, 张宝顺, 杨辉. Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes[J]. 中国物理B, 2014, 23(2): 28503-028503.

Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Wu Liang-Liang (吴亮亮), Li Liang (李亮), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉). Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes[J]. Chin. Phys. B, 2014, 23(2): 28503-028503.

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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes

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