中国物理B ›› 2017, Vol. 26 ›› Issue (10): 108201-108201.doi: 10.1088/1674-1056/26/10/108201

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Angle-resolved x-ray photoelectron spectroscopy study of GeOx growth by plasma post-oxidation

Zhiqian Zhao(赵治乾), Jing Zhang(张静), Xiaolei Wang(王晓磊), Shuhua Wei(魏淑华), Chao Zhao(赵超), Wenwu Wang(王文武)   

  1. 1. Microelectronics Department, North China University of Technology, Beijing 100041, China;
    2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2017-04-01 修回日期:2017-06-15 出版日期:2017-10-05 发布日期:2017-10-05
  • 通讯作者: Jing Zhang, Jing Zhang E-mail:zhangj@ncut.edu.cn;wangxiaolei@ime.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

Angle-resolved x-ray photoelectron spectroscopy study of GeOx growth by plasma post-oxidation

Zhiqian Zhao(赵治乾)1, Jing Zhang(张静)1, Xiaolei Wang(王晓磊)2,3, Shuhua Wei(魏淑华)1, Chao Zhao(赵超)2,3, Wenwu Wang(王文武)2,3   

  1. 1. Microelectronics Department, North China University of Technology, Beijing 100041, China;
    2. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    3. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2017-04-01 Revised:2017-06-15 Online:2017-10-05 Published:2017-10-05
  • Contact: Jing Zhang, Jing Zhang E-mail:zhangj@ncut.edu.cn;wangxiaolei@ime.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

摘要: The growth process of GeOx films formed by plasma post-oxidation (PPO) at room temperature (RT) is investigated using angle-resolved x-ray photoelectron spectroscopy (AR-XPS). The experimental results show that the distributions of the Ge4+ states, a mixture of the Ge2+ and Ge3+ states, and the Ge1+ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge1+ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor (MOS) field-effect transistor (CMOSFET) devices.

关键词: Ge, plasma post-oxidation, MOS, XPS

Abstract: The growth process of GeOx films formed by plasma post-oxidation (PPO) at room temperature (RT) is investigated using angle-resolved x-ray photoelectron spectroscopy (AR-XPS). The experimental results show that the distributions of the Ge4+ states, a mixture of the Ge2+ and Ge3+ states, and the Ge1+ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge1+ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor (MOS) field-effect transistor (CMOSFET) devices.

Key words: Ge, plasma post-oxidation, MOS, XPS

中图分类号:  (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

  • 82.80.Pv
81.65.Mq (Oxidation) 52.77.Dq (Plasma-based ion implantation and deposition)