Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

doi:10.1088/1674-1056/25/8/087305

中国物理B ›› 2016, Vol. 25 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/25/8/087305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2016-03-26 修回日期:2016-04-21 出版日期:2016-08-05 发布日期:2016-08-05
通讯作者: Wen-Wu Wang E-mail:wangwenwu@ime.ac.cn
基金资助:
Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2016-03-26 Revised:2016-04-21 Online:2016-08-05 Published:2016-08-05
Contact: Wen-Wu Wang E-mail:wangwenwu@ime.ac.cn
Supported by:
Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

摘要/Abstract

摘要： The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N_it/N_ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.

关键词: high-k metal gate, TiN capping layer, TDDB, interface trap density

Abstract: The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N_it/N_ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.

Key words: high-k metal gate, TiN capping layer, TDDB, interface trap density

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.43.Cd (Theory and modeling) 77.22.Jp (Dielectric breakdown and space-charge effects)

徐昊, 杨红, 罗维春, 徐烨峰, 王艳蓉, 唐波, 王文武, 祁路伟, 李俊峰, 闫江, 朱慧珑, 赵超, 陈大鹏, 叶甜春. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations[J]. 中国物理B, 2016, 25(8): 87305-087305.

Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春). Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations[J]. Chin. Phys. B, 2016, 25(8): 87305-087305.

参考文献 17

[1]	Auth C, Cappellani A, Chun J S, et al. 2008 Symposium on VLSI Technology, June 17-19, 2008, Honolulu, HI, USA, p. 128-129
[2]	Packan P, Akbar S, Armstrong M, et al. 2009 IEEE International, Electron Devices Meeting (IEDM), Decmber 7-9, 2009, Baltimore, MD, p. 1-4
[3]	Auth C, Allen C, Blattner A,et al. 2012 Symposium on VLSI Technology (VLSIT), June 12-14, 2012, Honolulu, HI, p. 131-132
[4]	Natarajan S, Agostinelli M, Akbar S, et al. 2014 IEEE International, Electron Devices Meeting (IEDM), December 15-17, 2014, San Francisco, CA, p. 3.7.1-3.7.3
[5]	Prasad C, Agostinelli M, Auth C, et al. 2008 IEEE International Reliability Physics Symposium, April 27-May 1, 2008, Phoenix, AZ, pp. 667-668
[6]	Pae S, Ashok A, Choi J, et al., May 2-6, Anaheim, CA, pp. 287-292
[7]	Ramey S, Ashutosh A, Auth C, Clifford J, Hattendorf M, Hicks J, James R, Rahman A, Sharma V, Amour A S and Wiegand C 2013 IEEE International Reliability Physics Symposium (IRPS), April 14-18, Anaheim, CA, pp. 4C.5.1-4C.5.5
[8]	Novak S, Parker C, Becher D, Liu M, Agostinelli M, Chahal M, Packan P, Nayak P, Ramey S and Natarajan S 2015 IEEE International Reliability Physics Symposium (IRPS), April 19-23, 2015, Monterey, CA, pp. 2F.2.1-2F.2.5
[9]	Chen C L and King Y C 2011 IEEE Trans. Electron Dev. 58 3736
[10]	Chen C L and King Y C 2011 IEEE Electron Dev. Lett. 32 707
[11]	Westlinder J, Schram T, Pantisano L, Cartier E, Kerber A, Lujan G S, Olsson J and Groeseneken G 2003 IEEE Electron Dev. Lett. 24 550
[12]	Degraeve R, Groeseneken G, Bellens R, Ogier J L, Depas M, Roussel P J and Maes H E 1998 IEEE Trans. Electron Dev. 45 904
[13]	Nigam T, Kerber A and Peumans P 2009 IEEE International Reliability Physics Symposium, April 26-30, 2009, Montreal, QC, pp. 523-530
[14]	Young C D, Bersuker G, Jo M, Matthews K, Huang J, Deora S, Ang K W, Ngai T, Hobbs C, Kirsch P D, Padovani A and Larcher L 2012 IEEE International Reliability Physics Symposium (IRPS), April 15-19, Anaheim, CA, pp. 5D.3.1-5D.3.5
[15]	Qi L W, Yang H, Ren S Q, Xu Y F, Luo W C, Xu H, Wang Y R, Tang B, Wang W W, Yan J, Zhu H L, Zhao C, Chen D P and Ye T C 2015 Chin. Phys. B 24 127305
[16]	Ren S Q, Yang H, Wang W W, Tang B, Tang Z Y, Wang X L, Xu H, Luo W C, Zhao C, Yan J, Chen D P and Ye T C 2015 Chin. Phys. B 24 077304
[17]	Park D G, Lim K Y, Cho H J, Cha T H, Yeo I S, Roh J S and Park J W 2002 Appl. Phys. Lett. 80 2514

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

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