中国物理B ›› 2016, Vol. 25 ›› Issue (6): 66105-066105.doi: 10.1088/1674-1056/25/6/066105

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption

Zhi-Yuan Gao(高志远), Xiao-Wei Xue(薛晓玮), Jiang-Jiang Li(李江江), Xun Wang(王勋), Yan-Hui Xing(邢艳辉), Bi-Feng Cui(崔碧峰), De-Shu Zou(邹德恕)   

  1. Microelectronic School, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2015-10-25 修回日期:2016-01-22 出版日期:2016-06-05 发布日期:2016-06-05
  • 通讯作者: Zhi-Yuan Gao E-mail:zygao@bjut.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204009 and 61204011) and the Beijing Municipal Natural Science Foundation, China (Grant No. 4142005).

Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption

Zhi-Yuan Gao(高志远), Xiao-Wei Xue(薛晓玮), Jiang-Jiang Li(李江江), Xun Wang(王勋), Yan-Hui Xing(邢艳辉), Bi-Feng Cui(崔碧峰), De-Shu Zou(邹德恕)   

  1. Microelectronic School, Beijing University of Technology, Beijing 100124, China
  • Received:2015-10-25 Revised:2016-01-22 Online:2016-06-05 Published:2016-06-05
  • Contact: Zhi-Yuan Gao E-mail:zygao@bjut.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11204009 and 61204011) and the Beijing Municipal Natural Science Foundation, China (Grant No. 4142005).

摘要:

Frank's theory describes that a screw dislocation will produce a pit on the surface, and has been evidenced in many material systems including GaN. However, the size of the pit calculated from the theory deviates significantly from experimental result. Through a careful observation of the variations of surface pits and local surface morphology with growing temperature and V/III ratio for c-plane GaN, we believe that Frank's model is valid only in a small local surface area where thermodynamic equilibrium state can be assumed to stay the same. If the kinetic process is too vigorous or too slow to reach a balance, the local equilibrium range will be too small for the center and edge of the screw dislocation spiral to be kept in the same equilibrium state. When the curvature at the center of the dislocation core reaches the critical value 1/r0, at the edge of the spiral, the accelerating rate of the curvature may not fall to zero, so the pit cannot reach a stationary shape and will keep enlarging under the control of minimization of surface energy to result in a large-sized surface pit.

关键词: GaN, surface pit, Frank's model, local equilibrium

Abstract:

Frank's theory describes that a screw dislocation will produce a pit on the surface, and has been evidenced in many material systems including GaN. However, the size of the pit calculated from the theory deviates significantly from experimental result. Through a careful observation of the variations of surface pits and local surface morphology with growing temperature and V/III ratio for c-plane GaN, we believe that Frank's model is valid only in a small local surface area where thermodynamic equilibrium state can be assumed to stay the same. If the kinetic process is too vigorous or too slow to reach a balance, the local equilibrium range will be too small for the center and edge of the screw dislocation spiral to be kept in the same equilibrium state. When the curvature at the center of the dislocation core reaches the critical value 1/r0, at the edge of the spiral, the accelerating rate of the curvature may not fall to zero, so the pit cannot reach a stationary shape and will keep enlarging under the control of minimization of surface energy to result in a large-sized surface pit.

Key words: GaN, surface pit, Frank's model, local equilibrium

中图分类号:  (Kinetics of defect formation and annealing)

  • 61.72.Cc
68.55.-a (Thin film structure and morphology) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 61.72.uj (III-V and II-VI semiconductors)