Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

doi:10.1088/1674-1056/25/3/037103

中国物理B ›› 2016, Vol. 25 ›› Issue (3): 37103-037103.doi: 10.1088/1674-1056/25/3/037103

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Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

Yilin Wang(王义林), Li Huang(黄理), Liang Du(杜亮), Xi Dai(戴希)

1. Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, China;
3. Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA

收稿日期:2015-11-04 修回日期:2015-12-18 出版日期:2016-03-05 发布日期:2016-03-05
通讯作者: Xi Dai E-mail:daix@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 2011CBA00108) and the National Basic Research Program of China (Grant No. 2013CB921700).

Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

Yilin Wang(王义林)¹, Li Huang(黄理)², Liang Du(杜亮)³, Xi Dai(戴希)¹

1. Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, China;
3. Department of Physics, The University of Texas at Austin, Austin, TX 78712, USA

Received:2015-11-04 Revised:2015-12-18 Online:2016-03-05 Published:2016-03-05
Contact: Xi Dai E-mail:daix@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 2011CBA00108) and the National Basic Research Program of China (Grant No. 2013CB921700).

摘要/Abstract

摘要：

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.

关键词: orbital-selective Mott transition, doping, multi-band Hubbard model

Abstract:

Key words: orbital-selective Mott transition, doping, multi-band Hubbard model

中图分类号: (Metal-insulator transitions and other electronic transitions)

71.30.+h

71.28.+d (Narrow-band systems; intermediate-valence solids) 71.10.Fd (Lattice fermion models (Hubbard model, etc.))

王义林, 黄理, 杜亮, 戴希. Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting[J]. 中国物理B, 2016, 25(3): 37103-037103.

Yilin Wang(王义林), Li Huang(黄理), Liang Du(杜亮), Xi Dai(戴希). Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting[J]. Chin. Phys. B, 2016, 25(3): 37103-037103.

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Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

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