High performance photodetectors based on high quality InP nanowires

doi:10.1088/1674-1056/25/11/118106

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118106-118106.doi: 10.1088/1674-1056/25/11/118106

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

High performance photodetectors based on high quality InP nanowires

Yan-Kun Yang(杨燕琨), Tie-Feng Yang(杨铁锋), Hong-Lai Li(李洪来), Zhao-Yang Qi(祁朝阳), Xin-Liang Chen(陈新亮), Wen-Qiang Wu(吴文强), Xue-Lu Hu(胡学鹿), Peng-Bin He(贺鹏斌), Ying Jiang(蒋英), Wei Hu(胡伟), Qing-Lin Zhang(张清林), Xiu-Juan Zhuang(庄秀娟), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练)

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics Science, Hunan University, Changsha 410082, China

收稿日期:2016-08-11 修回日期:2016-09-10 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Xiao-Li Zhu, An-Lian Pan E-mail:zhuxiaoli@hnu.edu.cn;anlian.pan@hnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

High performance photodetectors based on high quality InP nanowires

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics Science, Hunan University, Changsha 410082, China

Received:2016-08-11 Revised:2016-09-10 Online:2016-11-05 Published:2016-11-05
Contact: Xiao-Li Zhu, An-Lian Pan E-mail:zhuxiaoli@hnu.edu.cn;anlian.pan@hnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61574054, 61505051, and 61474040), the Science and Technology Plan of Hunan Province, China (Grant Nos. 2014FJ2001 and 2014TT1004), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.

摘要/Abstract

摘要：

In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W^-1 and an external quantum efficiency of 2.8×10⁵% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.

关键词: InP nanowires, small diameter, photodetector, back-gate voltage

Abstract:

Key words: InP nanowires, small diameter, photodetector, back-gate voltage

中图分类号: (Nanowires)

81.07.Gf

85.60.Gz (Photodetectors (including infrared and CCD detectors))

杨燕琨, 杨铁锋, 李洪来, 祁朝阳, 陈新亮, 吴文强, 胡学鹿, 贺鹏斌, 蒋英, 胡伟, 张清林, 庄秀娟, 朱小莉, 潘安练. High performance photodetectors based on high quality InP nanowires[J]. 中国物理B, 2016, 25(11): 118106-118106.

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High performance photodetectors based on high quality InP nanowires

High performance photodetectors based on high quality InP nanowires

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