›› 2014, Vol. 23 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/23/8/087304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Bipolar resistance switching in the fully transparent BaSnO3-based memory device

张婷a b, 殷江a, 赵高峰b, 张伟风b, 夏奕东a, 刘治国a   

  1. a National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, China;
    b Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
  • 收稿日期:2013-10-19 修回日期:2014-01-30 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11174135 and 60976016), the National 973 Project, China (Gant No. 0213117005), the State Key Program for Basic Research of China (Grant No. 2010CB630704), the Science Foundation of Henan Province, China (Grant No. 14A430020), the Science Foundation of Henan University, China (Grant No. SBGJ090503), and China Postdoctoral Science Foundation (Grant No. 2012M511250).

Bipolar resistance switching in the fully transparent BaSnO3-based memory device

Zhang Ting (张婷)a b, Yin Jiang (殷江)a, Zhao Gao-Feng (赵高峰)b, Zhang Wei-Feng (张伟风)b, Xia Yi-Dong (夏奕东)a, Liu Zhi-Guo (刘治国)a   

  1. a National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093, China;
    b Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
  • Received:2013-10-19 Revised:2014-01-30 Online:2014-08-15 Published:2014-08-15
  • Contact: Yin Jiang E-mail:jyin@nju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11174135 and 60976016), the National 973 Project, China (Gant No. 0213117005), the State Key Program for Basic Research of China (Grant No. 2010CB630704), the Science Foundation of Henan Province, China (Grant No. 14A430020), the Science Foundation of Henan University, China (Grant No. SBGJ090503), and China Postdoctoral Science Foundation (Grant No. 2012M511250).

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摘要： The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interfacial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.

关键词: transparent resistive random access memory, resistance switching, oxygen vacancy, BaSnO3

Abstract: The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interfacial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.

Key words: transparent resistive random access memory, resistance switching, oxygen vacancy, BaSnO3

中图分类号:  (Electronic transport in interface structures)

  • 73.40.-c
73.40.Rw (Metal-insulator-metal structures) 73.50.Fq (High-field and nonlinear effects) 72.20.-i (Conductivity phenomena in semiconductors and insulators)