中国物理B ›› 2014, Vol. 23 ›› Issue (8): 87301-087301.doi: 10.1088/1674-1056/23/8/087301
• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇 下一篇
李军建a, 王国祥b, 陈益敏a, 沈祥b, 聂秋华a, 吕业刚a, 戴世勋b, 徐铁锋b
Li Jun-Jian (李军建)a, Wang Guo-Xiang (王国祥)b, Chen Yi-Min (陈益敏)a, Shen Xiang (沈祥)b, Nie Qiu-Hua (聂秋华)a, Lü Ye-Gang (吕业刚)a, Dai Shi-Xun (戴世勋)b, Xu Tie-Feng (徐铁锋)b
摘要: Mg-doped Sb3Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb3Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb3Te. Especially Mg25.19(Sb3Te)74.81 shows higher Tc (~ 190 ℃) and larger Ea (~ 3.49 eV), which results in a better data retention maintaining for 10 yr at ~ 112 ℃. Moreover Ra/Rc value is also improved. These excellent properties make Mg-Sb-Te material a promising candidate for the phase-change memory (PCM).
中图分类号: (Metal and metallic alloys)