中国物理B ›› 2014, Vol. 23 ›› Issue (6): 68102-068102.doi: 10.1088/1674-1056/23/6/068102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Depth-dependent mosaic tilt and twist in GaN epilayer：An approximate evaluation

张金风, 聂玉虎, 周勇波, 田坤, 哈微, 肖明, 张进成, 郝跃   

  1. School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China
  • 收稿日期:2013-12-21 修回日期:2014-02-17 出版日期:2014-06-15 发布日期:2014-06-15
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61306017 and 61204006), the Key Program of the National Natural Science Foundation of China (Grant No. 61334002), and the Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225016 and K5051325020).

Depth-dependent mosaic tilt and twist in GaN epilayer：An approximate evaluation

Zhang Jin-Feng (张金风), Nie Yu-Hu (聂玉虎), Zhou Yong-Bo (周勇波), Tian Kun (田坤), Ha Wei (哈微), Xiao Ming (肖明), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)   

  1. School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China
  • Received:2013-12-21 Revised:2014-02-17 Online:2014-06-15 Published:2014-06-15
  • Contact: Zhang Jin-Feng E-mail:jfzhang@xidian.edu.cn
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61306017 and 61204006), the Key Program of the National Natural Science Foundation of China (Grant No. 61334002), and the Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225016 and K5051325020).

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摘要： An approach based on depth-sensitive skew-angle x-ray diffraction (SAXRD) is presented for approximately evaluating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that (103) plane and (101) plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive (103)/(101) ω -scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach.

关键词: mosaic structure, tilt and twist, skew angle x-ray diffraction, GaN

Abstract: An approach based on depth-sensitive skew-angle x-ray diffraction (SAXRD) is presented for approximately evaluating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that (103) plane and (101) plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive (103)/(101) ω -scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach.

Key words: mosaic structure, tilt and twist, skew angle x-ray diffraction, GaN

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
61.72.Dd (Experimental determination of defects by diffraction and scattering)