中国物理B ›› 2014, Vol. 23 ›› Issue (2): 26101-026101.doi: 10.1088/1674-1056/23/2/026101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

陈勇跃, 王雄, 才玺坤, 原子健, 朱夏明, 邱东江, 吴惠桢   

  1. Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2012-12-27 修回日期:2013-07-23 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61290305 and 91021020) and the Natural Science Foundation of Zhejiang Province, China (Grant No. Z6100117).

Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor

Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢)   

  1. Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
  • Received:2012-12-27 Revised:2013-07-23 Online:2013-12-12 Published:2013-12-12
  • Contact: Wu Hui-Zhen E-mail:hzwu@zju.edu.cn
  • About author:61.66.Dk; 68.55.ag; 73.61.Ga; 78.66.Hf
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61290305 and 91021020) and the Natural Science Foundation of Zhejiang Province, China (Grant No. Z6100117).

摘要: Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/(V·s) and 3×105 are obtained, respectively. The transfer characteristics of the ZnSnO TFT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.

关键词: zinc tin oxide, thin-film transistors, mobility, annealing

Abstract: Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/(V·s) and 3×105 are obtained, respectively. The transfer characteristics of the ZnSnO TFT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.

Key words: zinc tin oxide, thin-film transistors, mobility, annealing

中图分类号:  (Alloys )

  • 61.66.Dk
68.55.ag (Semiconductors) 73.61.Ga (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)