High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

doi:10.1088/1674-1056/23/1/017805

Chin. Phys. B ›› 2014, Vol. 23 ›› Issue (1): 17805-017805.doi: 10.1088/1674-1056/23/1/017805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

邢军亮, 张宇, 徐应强, 王国伟, 王娟, 向伟, 倪海桥, 任正伟, 贺振宏, 牛智川

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2013-04-25 修回日期:2013-05-10 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2013CB932904, 2012CB932701, 2011CB922201, and 2010CB327600), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), and the National Natural Science Foundation of China (Grant Nos. 61274013, U1037602, and 61290303).

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2013-04-25 Revised:2013-05-10 Online:2013-11-12 Published:2013-11-12
Contact: Niu Zhi-Chuan E-mail:zcniu@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2013CB932904, 2012CB932701, 2011CB922201, and 2010CB327600), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), and the National Natural Science Foundation of China (Grant Nos. 61274013, U1037602, and 61290303).

摘要/Abstract

摘要： The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well (QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well (MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence (PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In_0.485GaAs_0.184Sb/Al_0.3Ga_0.45In_0.25As_0.22Sb_0.78 MQW with 1.72% compressive strain grown at 460 ℃ posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.

关键词: GaSb, multiple-quantum well, photoluminescence

Abstract: The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well (QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well (MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence (PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In_0.485GaAs_0.184Sb/Al_0.3Ga_0.45In_0.25As_0.22Sb_0.78 MQW with 1.72% compressive strain grown at 460 ℃ posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.

Key words: GaSb, multiple-quantum well, photoluminescence

中图分类号: (III-V semiconductors)

78.55.Cr

78.66.Fd (III-V semiconductors) 78.67.De (Quantum wells)

邢军亮, 张宇, 徐应强, 王国伟, 王娟, 向伟, 倪海桥, 任正伟, 贺振宏, 牛智川. High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J]. Chin. Phys. B, 2014, 23(1): 17805-017805.

Xing Jun-Liang (邢军亮), Zhang Yu (张宇), Xu Ying-Qiang (徐应强), Wang Guo-Wei (王国伟), Wang Juan (王娟), Xiang Wei (向伟), Ni Hai-Qiao (倪海桥), Ren Zheng-Wei (任正伟), He Zhen-Hong (贺振宏), Niu Zhi-Chuan (牛智川). High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy[J]. Chin. Phys. B, 2014, 23(1): 17805-017805.

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High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

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