Molecular-beam epitaxy of topological insulator Bi2Se3 (111) and (221) thin films

doi:10.1088/1674-1056/22/6/068101

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68101-068101.doi: 10.1088/1674-1056/22/6/068101

所属专题： TOPICAL REVIEW — Topological insulator

• TOPICAL REVIEW—Topological insulator • 上一篇下一篇

Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films

谢茂海, 郭欣, 徐忠杰, 何永健

Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong, China

收稿日期:2013-04-02 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the Research Grant Council (RGC) of Hong Kong Special Administrative Region for its financial support under the General Research Funds (Grant Nos. 706110 and 706111) and the SRFDP and RGCERG Joint Research Scheme sponsored by the RGC of Hong Kong and the Ministry of Education of China (M-HKU709/l2).

Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films

Xie Mao-Hai (谢茂海), Guo Xin (郭欣), Xu Zhong-Jie (徐忠杰), Ho Wing-Kin (何永健)

Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong, China

Received:2013-04-02 Online:2013-05-01 Published:2013-05-01
Contact: Xie Mao-Hai E-mail:mhxie@hku.hk
Supported by:
Project supported by the Research Grant Council (RGC) of Hong Kong Special Administrative Region for its financial support under the General Research Funds (Grant Nos. 706110 and 706111) and the SRFDP and RGCERG Joint Research Scheme sponsored by the RGC of Hong Kong and the Ministry of Education of China (M-HKU709/l2).

摘要/Abstract

摘要： This paper presents an overview of growth of Bi₂Se₃, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between growth of Bi₂Se₃ (111) on van der Waals (vdW) and non-vdW substrates, with attention paid to twin suppression and strain. Growth along the [221] direction of Bi₂Se₃ on InP (001) and GaAs (001) substrates is also discussed.

关键词: topological insulator, molecular-beam epitaxy, Bi₂Se₃, twin domain, strain

Abstract: This paper presents an overview of growth of Bi₂Se₃, a prototypical three-dimensional topological insulator, by molecular-beam epitaxy on various substrates. Comparison is made between growth of Bi₂Se₃ (111) on van der Waals (vdW) and non-vdW substrates, with attention paid to twin suppression and strain. Growth along the [221] direction of Bi₂Se₃ on InP (001) and GaAs (001) substrates is also discussed.

Key words: topological insulator, molecular-beam epitaxy, Bi₂Se₃, twin domain, strain

中图分类号: (Methods of deposition of films and coatings; film growth and epitaxy)

81.15.-z

81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 68.55.-a (Thin film structure and morphology) 68.37.-d (Microscopy of surfaces, interfaces, and thin films)

谢茂海, 郭欣, 徐忠杰, 何永健. Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films[J]. 中国物理B, 2013, 22(6): 68101-068101.

Xie Mao-Hai (谢茂海), Guo Xin (郭欣), Xu Zhong-Jie (徐忠杰), Ho Wing-Kin (何永健). Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films[J]. Chin. Phys. B, 2013, 22(6): 68101-068101.

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Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films

Molecular-beam epitaxy of topological insulator Bi₂Se₃ (111) and (221) thin films

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