Valley-dependent transport in strain engineering graphene heterojunctions

doi:10.1088/1674-1056/ac5613

中国物理B ›› 2022, Vol. 31 ›› Issue (7): 77302-077302.doi: 10.1088/1674-1056/ac5613

Valley-dependent transport in strain engineering graphene heterojunctions

Fei Wan(万飞)¹, X R Wang(王新茹)¹, L H Liao(廖烈鸿)¹, J Y Zhang(张嘉颜)¹, M N Chen(陈梦南)¹, G H Zhou(周光辉)², Z B Siu(萧卓彬)³, Mansoor B. A. Jalil³, and Yuan Li(李源)^1,†

1 Department of Physics, Hangzhou Dianzi University, Hangzhou 310018, China;
2 Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation(Ministry of Education), Hunan Normal University, Changsha 410081, China;
3 Computational Nanoelectronics and Nano-device Laboratory, Electrical and Computer Engineering Department, National University of Singapore, Singapore 117576, Singapore

收稿日期:2021-10-27 修回日期:2022-01-28 接受日期:2022-02-17 出版日期:2022-06-09 发布日期:2022-06-13
通讯作者: Yuan Li E-mail:liyuan@hdu.edu.cn
基金资助:
Project supported by National Natural Science Foundation of China (Grant No. 11574067).

Valley-dependent transport in strain engineering graphene heterojunctions

1 Department of Physics, Hangzhou Dianzi University, Hangzhou 310018, China;
2 Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation(Ministry of Education), Hunan Normal University, Changsha 410081, China;
3 Computational Nanoelectronics and Nano-device Laboratory, Electrical and Computer Engineering Department, National University of Singapore, Singapore 117576, Singapore

Received:2021-10-27 Revised:2022-01-28 Accepted:2022-02-17 Online:2022-06-09 Published:2022-06-13
Contact: Yuan Li E-mail:liyuan@hdu.edu.cn
Supported by:
Project supported by National Natural Science Foundation of China (Grant No. 11574067).

摘要/Abstract

摘要： We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies. In the presence of strain, the values of transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.

关键词: strain engineering, valley-dependent separation, graphene, on-site energy

Abstract: We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies. In the presence of strain, the values of transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.

Key words: strain engineering, valley-dependent separation, graphene, on-site energy

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

Fei Wan(万飞), X R Wang(王新茹), L H Liao(廖烈鸿), J Y Zhang(张嘉颜),M N Chen(陈梦南), G H Zhou(周光辉), Z B Siu(萧卓彬), Mansoor B. A. Jalil, and Yuan Li(李源). Valley-dependent transport in strain engineering graphene heterojunctions[J]. 中国物理B, 2022, 31(7): 77302-077302.

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Valley-dependent transport in strain engineering graphene heterojunctions

Valley-dependent transport in strain engineering graphene heterojunctions

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