中国物理B ›› 2013, Vol. 22 ›› Issue (5): 59501-059501.doi: 10.1088/1674-1056/22/5/059501
• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇 下一篇
耿超a b, 刘杰a, 习凯a b, 张战刚a b, 古松a b, 侯明东a, 孙友梅a, 段敬来a, 姚会军a, 莫丹a
Geng Chao (耿超)a b, Liu Jie (刘杰)a, Xi Kai (习凯)a b, Zhang Zhan-Gang (张战刚)a b, Gu Song (古松)a b, Hou Ming-Dong (侯明东)a, Sun You-Mei (孙友梅)a, Duan Jing-Lai (段敬来)a, Yao Hui-Jun (姚会军)a, Mo Dan (莫丹)a
摘要: We investigate the impact of heavy ion irradiation on hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.
中图分类号: (Observation and data reduction techniques; computer modeling and simulation)