Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films

doi:10.1088/1674-1056/22/3/036103

中国物理B ›› 2013, Vol. 22 ›› Issue (3): 36103-036103.doi: 10.1088/1674-1056/22/3/036103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films

高博, 刘刚, 王立新, 韩郑生, 宋李梅, 张彦飞, 腾瑞, 吴海舟

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2012-05-06 修回日期:2012-11-14 出版日期:2013-02-01 发布日期:2013-02-01

Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films

Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟)

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2012-05-06 Revised:2012-11-14 Online:2013-02-01 Published:2013-02-01
Contact: Gao Bo E-mail:gaobo@ime.ac.cn

摘要/Abstract

摘要： Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor (VDMOS) devices with composite SiO₂-Si₃N₄ film gate are investigated. The relationships among the important electrical parameters of the samples with different thickness SiO₂-Si₃N₄ films, such as threshold voltage, breakdown voltage, and on-state resistance in accumulated dose, are discussed. The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose. However, the relationships between the threshold voltages of the samples and the accumulated dose are more complex, not only positive drift, but also negative drift. At the end of the total dose experiment, we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies. We find that the samples with appropriate thickness ratio SiO₂-Si₃N₄ films have a good radiation-hardening ability. This method may be useful in solving both the SEGR and the total dose problems with the composite SiO₂-Si₃N₄films.

关键词: power VDMOS device, total dose effects, single event effects, composite SiO₂-Si₃N₄ films

Abstract: Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor (VDMOS) devices with composite SiO₂-–Si₃N₄ film gate are investigated. The relationships among the important electrical parameters of the samples with different thickness SiO₂-–Si₃N₄ films, such as threshold voltage, breakdown voltage, and on-state resistance in accumulated dose, are discussed. The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose. However, the relationships between the threshold voltages of the samples and the accumulated dose are more complex, not only positive drift, but also negative drift. At the end of the total dose experiment, we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies. We find that the samples with appropriate thickness ratio SiO₂-–Si₃N₄ films have a good radiation-hardening ability. This method may be useful in solving both the SEGR and the total dose problems with the composite SiO₂-–Si₃N₄films.

Key words: power VDMOS device, total dose effects, single event effects, composite SiO₂–Si₃N₄ films

中图分类号: (Semiconductors)

61.82.Fk

61.80.Ed (γ-ray effects) 61.80.Jh (Ion radiation effects) 81.40.Wx (Radiation treatment)

高博, 刘刚, 王立新, 韩郑生, 宋李梅, 张彦飞, 腾瑞, 吴海舟. Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films[J]. 中国物理B, 2013, 22(3): 36103-036103.

Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟). Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films[J]. Chin. Phys. B, 2013, 22(3): 36103-036103.

参考文献 17

[1]	Dodd P E, Shaneyfelt M R, Draper B L, Young, R W, Savignon D, Witcher J B, Vizkelethy G, Schwanki J R, Shen Z J, Shea P, Landowski M and Dalton S M 2009 IEEE Trans. Nucl. Sci. 56 3456
[2]	Haran A, Barak J, David D, Refaeli N, Fischer B E, Voss K O, Du G and Heiss M 2007 IEEE Trans. Nucl. Sci. 54 2488
[3]	Zhang E X, Newaz A K M, Wang B, Bhandaru S, Zhang C X, Fleetwood D M, Bolotin K I, Pantelides S T, Alles M L, Schrimpf R D, Weiss S M, Reed R A and Weller R A 2011 IEEE Trans. Nucl. Sci. 58 2961
[4]	Irom F, Nguyen D N, Underwood M L and Virtanen A 2010 IEEE Trans. Nucl. Sci. 57 3329
[5]	Hands A, Morris P, Ryden K, Dyer C, Truscott P, Chugg A and Parker S 2011 IEEE Trans. Nucl. Sci. 58 2687
[6]	Miller F, Luu A, Prud'homme F, Poirot P, Gaillard R, Buard N and Carrire T 2006 IEEE Trans. Nucl. Sci. 53 3145
[7]	Liu S, Lauenstein J M, Ferlet-Cavrois V, Marec R, Hernandez F, Scheick L, Bezerra F, Muschitiello M, Poivey C, Sukhaseum N, Coquelet L, Cao H, Carrier D, Brisebois M A, Mangeret R, Ecoffet R, LaBel K, Zafrani M and Sherman P 2011 IEEE Trans. Nucl. Sci. 58 2991
[8]	Johnson G H and Galloway K F 1996 IEEE Nuclear and Space Radiation Effects Conference Short Course, July 15-19, 1996 India Wells, California,
[9]	Fraass R G and Tallon R W 1978 IEEE Trans. Nucl. Sci. 25 1613
[10]	Dunn G J and Wyatt P W 1989 IEEE Trans. Nucl. Sci. 36 2161
[11]	Ma T P, Yun B H, DiMaria D J and Scoggan G A 1976 J. Appl. Phys. 47 1599
[12]	Zhang E X, Qian C, Zhang Z X, Wang X, Zhang G Q, Li N, Zheng Z S and Liu Z L 2005 Chin. J. Sem. 26 1269 (in Chinese)
[13]	Zhang G Q, Lu W, Yu X F, Guo Q, Ren D Y and Yan R L 1999 Chin. J. Sem. 20 437 (in Chinese)
[14]	Cricchi J R and Barbe D F 1971 Appl. Phys. Lett. 19 49
[15]	Lee S C, Raparla A, Li Y F, Gasiot G, Schrimpf R D, Fleetwood D M, Galloway K F, Featherby M and Johnson D 2000 IEEE Trans. Nucl. Sci. 47 2297
[16]	Takahashi Y, Ohnishi K, Fujimaki T and Yoshikawa M 1999 IEEE Trans. Nucl. Sci. 46 1578
[17]	Saks N S 1978 IEEE Trans. Nucl. Sci. 25 1226

Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films

Radiation damage effects on power VDMOS devices with composite SiO₂–Si₃N₄ films

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